Electrical resistivity of ultrathin, epitaxial CoGa on GaAs

T. C. Kuo; K. L. Wang

doi:10.1063/1.105687

Electrical resistivity of ultrathin, epitaxial CoGa on GaAs

T. C. Kuo
, K. L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The successful growth of ultrathin CoGa on GaAs by MBE is demonstrated. The crystalline quality of the films is verified by in situ RHEED, RBS, and x-ray rocking curve. Transport studies are performed in the temperature range of 4 to 300 K for layer thickness from 10 to 730 Å, and all the films are found to be electrically continuous. The Markowitz's model [Phys. Rev. B 15, 3617 (1977)] of the electrical resistivity is applied to analyze the measured data. Finally, the specularly scattering probability of these thin films is studied using Fuchs' theory [Proc. Cambridge Philos. Soc. 34, 100 (1938)].

Original language	English
Pages (from-to)	3399-3401
Number of pages	3
Journal	Applied Physics Letters
Volume	59
Issue number	26
DOIs	https://doi.org/10.1063/1.105687
Publication status	Published - 1991

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.105687

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abstract = "The successful growth of ultrathin CoGa on GaAs by MBE is demonstrated. The crystalline quality of the films is verified by in situ RHEED, RBS, and x-ray rocking curve. Transport studies are performed in the temperature range of 4 to 300 K for layer thickness from 10 to 730 {\AA}, and all the films are found to be electrically continuous. The Markowitz's model [Phys. Rev. B 15, 3617 (1977)] of the electrical resistivity is applied to analyze the measured data. Finally, the specularly scattering probability of these thin films is studied using Fuchs' theory [Proc. Cambridge Philos. Soc. 34, 100 (1938)].",

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T1 - Electrical resistivity of ultrathin, epitaxial CoGa on GaAs

AU - Kuo, T. C.

AU - Wang, K. L.

PY - 1991

Y1 - 1991

N2 - The successful growth of ultrathin CoGa on GaAs by MBE is demonstrated. The crystalline quality of the films is verified by in situ RHEED, RBS, and x-ray rocking curve. Transport studies are performed in the temperature range of 4 to 300 K for layer thickness from 10 to 730 Å, and all the films are found to be electrically continuous. The Markowitz's model [Phys. Rev. B 15, 3617 (1977)] of the electrical resistivity is applied to analyze the measured data. Finally, the specularly scattering probability of these thin films is studied using Fuchs' theory [Proc. Cambridge Philos. Soc. 34, 100 (1938)].

AB - The successful growth of ultrathin CoGa on GaAs by MBE is demonstrated. The crystalline quality of the films is verified by in situ RHEED, RBS, and x-ray rocking curve. Transport studies are performed in the temperature range of 4 to 300 K for layer thickness from 10 to 730 Å, and all the films are found to be electrically continuous. The Markowitz's model [Phys. Rev. B 15, 3617 (1977)] of the electrical resistivity is applied to analyze the measured data. Finally, the specularly scattering probability of these thin films is studied using Fuchs' theory [Proc. Cambridge Philos. Soc. 34, 100 (1938)].

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SN - 0003-6951

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EP - 3401

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

ER -

Electrical resistivity of ultrathin, epitaxial CoGa on GaAs

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