Electrical spin injection and transport in germanium

Yi Zhou, Wei Han, Li Te Chang, Faxian Xiu, Minsheng Wang, Michael Oehme, Inga A. Fischer, Joerg Schulze, Roland K. Kawakami, Kang L. Wang

Research output: Contribution to journalArticlepeer-review


We report the first experimental demonstration of electrical spin injection, transport, and detection in bulk germanium (Ge). The nonlocal magnetoresistance (MR) in n-type Ge is observable up to 225 K. Our results indicate that the spin relaxation rate in the n-type Ge is closely related to the momentum scattering rate, which is consistent with the predicted Elliot-Yafet spin relaxation mechanism for Ge. The bias dependence of the nonlocal MR and the spin lifetime in n-type Ge is also investigated.

Original languageEnglish
Article number125323
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number12
Publication statusPublished - 2011 Sep 30

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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