Electrical spin injection and transport in germanium

Yi Zhou; Wei Han; Li Te Chang; Faxian Xiu; Minsheng Wang; Michael Oehme; Inga A. Fischer; Joerg Schulze; Roland K. Kawakami; Kang L. Wang

doi:10.1103/PhysRevB.84.125323

Electrical spin injection and transport in germanium

Yi Zhou, Wei Han, Li Te Chang, Faxian Xiu, Minsheng Wang, Michael Oehme, Inga A. Fischer, Joerg Schulze, Roland K. Kawakami, Kang L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

161 Citations (Scopus)

Abstract

We report the first experimental demonstration of electrical spin injection, transport, and detection in bulk germanium (Ge). The nonlocal magnetoresistance (MR) in n-type Ge is observable up to 225 K. Our results indicate that the spin relaxation rate in the n-type Ge is closely related to the momentum scattering rate, which is consistent with the predicted Elliot-Yafet spin relaxation mechanism for Ge. The bias dependence of the nonlocal MR and the spin lifetime in n-type Ge is also investigated.

Original language	English
Article number	125323
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	84
Issue number	12
DOIs	https://doi.org/10.1103/PhysRevB.84.125323
Publication status	Published - 2011 Sept 30

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.84.125323

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AU - Zhou, Yi

AU - Han, Wei

AU - Chang, Li Te

AU - Xiu, Faxian

AU - Wang, Minsheng

AU - Oehme, Michael

AU - Fischer, Inga A.

AU - Schulze, Joerg

AU - Kawakami, Roland K.

AU - Wang, Kang L.

PY - 2011/9/30

Y1 - 2011/9/30

N2 - We report the first experimental demonstration of electrical spin injection, transport, and detection in bulk germanium (Ge). The nonlocal magnetoresistance (MR) in n-type Ge is observable up to 225 K. Our results indicate that the spin relaxation rate in the n-type Ge is closely related to the momentum scattering rate, which is consistent with the predicted Elliot-Yafet spin relaxation mechanism for Ge. The bias dependence of the nonlocal MR and the spin lifetime in n-type Ge is also investigated.

AB - We report the first experimental demonstration of electrical spin injection, transport, and detection in bulk germanium (Ge). The nonlocal magnetoresistance (MR) in n-type Ge is observable up to 225 K. Our results indicate that the spin relaxation rate in the n-type Ge is closely related to the momentum scattering rate, which is consistent with the predicted Elliot-Yafet spin relaxation mechanism for Ge. The bias dependence of the nonlocal MR and the spin lifetime in n-type Ge is also investigated.

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Electrical spin injection and transport in germanium

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