Electrical Stress and Total Ionizing Dose Effects on Graphene-Based NonVolatile Memory Devices

Cher Xuan Zhang, En Xia Zhang, Daniel M. Fleetwood, Michael L. Alles, Ronald D. Schrimpf, Emil B. Song, Sung Min Kim, Kang L. Wang, Kosmas Galatsis

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)

Abstract

Electrical stress and 10-keV x-ray and 1.8-MeV proton irradiation and annealing responses are evaluated for graphene-based nonvolatile memory devices. The memory characteristics of these structures derive primarily from hysteretic charge exchange between the graphene and interface and border traps, similar to the operation of metal-nitride-oxide-semicon-ductor memory devices. Excellent stability and memory retention are observed for ionizing radiation exposure or constant-voltage stress. Cycling of the memory state leads to a significant reduction in memory window.

Original languageEnglish
Pages (from-to)2974-2978
Number of pages5
JournalIEEE Transactions on Nuclear Science
Volume59
Issue number6
DOIs
Publication statusPublished - 2012 Dec

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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