Electrical Stress and Total Ionizing Dose Effects on Graphene-Based NonVolatile Memory Devices

Cher Xuan Zhang; En Xia Zhang; Daniel M. Fleetwood; Michael L. Alles; Ronald D. Schrimpf; Emil B. Song; Sung Min Kim; Kang L. Wang; Kosmas Galatsis

doi:10.1109/TNS.2012.2224135

Electrical Stress and Total Ionizing Dose Effects on Graphene-Based NonVolatile Memory Devices

Cher Xuan Zhang, En Xia Zhang, Daniel M. Fleetwood, Michael L. Alles, Ronald D. Schrimpf, Emil B. Song, Sung Min Kim, Kang L. Wang, Kosmas Galatsis

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

Electrical stress and 10-keV x-ray and 1.8-MeV proton irradiation and annealing responses are evaluated for graphene-based nonvolatile memory devices. The memory characteristics of these structures derive primarily from hysteretic charge exchange between the graphene and interface and border traps, similar to the operation of metal-nitride-oxide-semicon-ductor memory devices. Excellent stability and memory retention are observed for ionizing radiation exposure or constant-voltage stress. Cycling of the memory state leads to a significant reduction in memory window.

Original language	English
Pages (from-to)	2974-2978
Number of pages	5
Journal	IEEE Transactions on Nuclear Science
Volume	59
Issue number	6
DOIs	https://doi.org/10.1109/TNS.2012.2224135
Publication status	Published - 2012 Dec

All Science Journal Classification (ASJC) codes

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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title = "Electrical Stress and Total Ionizing Dose Effects on Graphene-Based NonVolatile Memory Devices",

abstract = "Electrical stress and 10-keV x-ray and 1.8-MeV proton irradiation and annealing responses are evaluated for graphene-based nonvolatile memory devices. The memory characteristics of these structures derive primarily from hysteretic charge exchange between the graphene and interface and border traps, similar to the operation of metal-nitride-oxide-semicon-ductor memory devices. Excellent stability and memory retention are observed for ionizing radiation exposure or constant-voltage stress. Cycling of the memory state leads to a significant reduction in memory window.",

author = "Zhang, {Cher Xuan} and Zhang, {En Xia} and Fleetwood, {Daniel M.} and Alles, {Michael L.} and Schrimpf, {Ronald D.} and Song, {Emil B.} and Kim, {Sung Min} and Wang, {Kang L.} and Kosmas Galatsis",

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doi = "10.1109/TNS.2012.2224135",

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AU - Zhang, Cher Xuan

AU - Zhang, En Xia

AU - Fleetwood, Daniel M.

AU - Alles, Michael L.

AU - Schrimpf, Ronald D.

AU - Song, Emil B.

AU - Kim, Sung Min

AU - Wang, Kang L.

AU - Galatsis, Kosmas

PY - 2012/12

Y1 - 2012/12

N2 - Electrical stress and 10-keV x-ray and 1.8-MeV proton irradiation and annealing responses are evaluated for graphene-based nonvolatile memory devices. The memory characteristics of these structures derive primarily from hysteretic charge exchange between the graphene and interface and border traps, similar to the operation of metal-nitride-oxide-semicon-ductor memory devices. Excellent stability and memory retention are observed for ionizing radiation exposure or constant-voltage stress. Cycling of the memory state leads to a significant reduction in memory window.

AB - Electrical stress and 10-keV x-ray and 1.8-MeV proton irradiation and annealing responses are evaluated for graphene-based nonvolatile memory devices. The memory characteristics of these structures derive primarily from hysteretic charge exchange between the graphene and interface and border traps, similar to the operation of metal-nitride-oxide-semicon-ductor memory devices. Excellent stability and memory retention are observed for ionizing radiation exposure or constant-voltage stress. Cycling of the memory state leads to a significant reduction in memory window.

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Electrical Stress and Total Ionizing Dose Effects on Graphene-Based NonVolatile Memory Devices

Abstract

All Science Journal Classification (ASJC) codes

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