Electrical Stress and Total Ionizing Dose Effects on Graphene-Based NonVolatile Memory Devices

Cher Xuan Zhang, En Xia Zhang, Daniel M. Fleetwood, Michael L. Alles, Ronald D. Schrimpf, Emil B. Song, Sung Min Kim, Kang L. Wang, Kosmas Galatsis

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)

Fingerprint

Dive into the research topics of 'Electrical Stress and Total Ionizing Dose Effects on Graphene-Based NonVolatile Memory Devices'. Together they form a unique fingerprint.

Physics & Astronomy

Engineering & Materials Science