Electrical transport and ac conductivity properties of hydrogenated annealing V-doped ZnO

S. H. Liu, J. C.A. Huang, C. R. Lin, X. Qi

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

The hydrogenated annealing effects on structure, magnetism, electrical transport, and ac conductivity for V-doped ZnO powders have been systematically investigated. Room temperature ferromagnetism has been observed for the hydrogenated V:ZnO powders. The saturation magnetization increases with hydrogenated annealing temperature (Tha). By the analysis of electrical transport and ac conductivity, the V:ZnO powders show Efros's variable range hopping and the density of microstructural defects increases with Tha. The results suggest that the fluctuation of the magnetization is strongly correlated with the defect density in V:ZnO powders.

Original languageEnglish
Article number07C502
JournalJournal of Applied Physics
Volume105
Issue number7
DOIs
Publication statusPublished - 2009

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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