Electro-optical modulator based on the p+-n+-n + transistor structure integrated on SOI substrate

Ricky W. Chuang; Mao Teng Hsu; Shen Horng Chou

doi:10.1364/cleo_at.2011.jtui5

Electro-optical modulator based on the p⁺-n⁺-n ⁺ transistor structure integrated on SOI substrate

Ricky W. Chuang, Mao Teng Hsu, Shen Horng Chou

Institute of Microelectronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report a p⁺-n⁺-n⁺ transistor-based electro-optical modulator fabricated on silicon-on-insulator (SOI) substrate. With 100% modulation depth achieved, the rise and fall times were respectively measured to be 60 and 56 ns. The 3 dB bandwidth in the excess of 10.5 MHz was determined from the corresponding device.

Original language	English
Title of host publication	2011 Conference on Lasers and Electro-Optics
Subtitle of host publication	Laser Science to Photonic Applications, CLEO 2011
Publisher	IEEE Computer Society
ISBN (Print)	9781557529107
DOIs	https://doi.org/10.1364/cleo_at.2011.jtui5
Publication status	Published - 2011

Publication series

Name	2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics

Access to Document

10.1364/cleo_at.2011.jtui5

Cite this

Chuang, R. W., Hsu, M. T., & Chou, S. H. (2011). Electro-optical modulator based on the p⁺-n⁺-n ⁺ transistor structure integrated on SOI substrate. In 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011 Article 5951080 (2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011). IEEE Computer Society. https://doi.org/10.1364/cleo_at.2011.jtui5

Chuang, Ricky W. ; Hsu, Mao Teng ; Chou, Shen Horng. / Electro-optical modulator based on the p⁺-n⁺-n ⁺ transistor structure integrated on SOI substrate. 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011. IEEE Computer Society, 2011. (2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011).

@inproceedings{0291fe00b8514a27a8f2f4b730dce9d7,

title = "Electro-optical modulator based on the p+-n+-n + transistor structure integrated on SOI substrate",

abstract = "We report a p+-n+-n+ transistor-based electro-optical modulator fabricated on silicon-on-insulator (SOI) substrate. With 100% modulation depth achieved, the rise and fall times were respectively measured to be 60 and 56 ns. The 3 dB bandwidth in the excess of 10.5 MHz was determined from the corresponding device.",

author = "Chuang, {Ricky W.} and Hsu, {Mao Teng} and Chou, {Shen Horng}",

year = "2011",

doi = "10.1364/cleo_at.2011.jtui5",

language = "English",

isbn = "9781557529107",

series = "2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011",

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address = "United States",

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Chuang, RW, Hsu, MT & Chou, SH 2011, Electro-optical modulator based on the p⁺-n⁺-n ⁺ transistor structure integrated on SOI substrate. in 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011., 5951080, 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011, IEEE Computer Society. https://doi.org/10.1364/cleo_at.2011.jtui5

Electro-optical modulator based on the p⁺-n⁺-n ⁺ transistor structure integrated on SOI substrate. / Chuang, Ricky W.; Hsu, Mao Teng; Chou, Shen Horng.
2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011. IEEE Computer Society, 2011. 5951080 (2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N2 - We report a p+-n+-n+ transistor-based electro-optical modulator fabricated on silicon-on-insulator (SOI) substrate. With 100% modulation depth achieved, the rise and fall times were respectively measured to be 60 and 56 ns. The 3 dB bandwidth in the excess of 10.5 MHz was determined from the corresponding device.

AB - We report a p+-n+-n+ transistor-based electro-optical modulator fabricated on silicon-on-insulator (SOI) substrate. With 100% modulation depth achieved, the rise and fall times were respectively measured to be 60 and 56 ns. The 3 dB bandwidth in the excess of 10.5 MHz was determined from the corresponding device.

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Chuang RW, Hsu MT, Chou SH. Electro-optical modulator based on the p⁺-n⁺-n ⁺ transistor structure integrated on SOI substrate. In 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011. IEEE Computer Society. 2011. 5951080. (2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011). doi: 10.1364/cleo_at.2011.jtui5