TY - GEN
T1 - Electro-optical modulator based on the p+-n+-n+ transistor structure integrated on SOI substrate
AU - Chuang, Ricky W.
AU - Hsu, Mao Teng
AU - Chou, Shen Horng
PY - 2011
Y1 - 2011
N2 - We report a p+-n+-n+ transistor-based electro-optical modulator fabricated on silicon-on-insulator (SOI) substrate. With 100% modulation depth achieved, the rise and fall times were respectively measured to be 60 and 56 ns. The 3 dB bandwidth in the excess of 10.5 MHz was determined from the corresponding device.
AB - We report a p+-n+-n+ transistor-based electro-optical modulator fabricated on silicon-on-insulator (SOI) substrate. With 100% modulation depth achieved, the rise and fall times were respectively measured to be 60 and 56 ns. The 3 dB bandwidth in the excess of 10.5 MHz was determined from the corresponding device.
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UR - http://www.scopus.com/inward/citedby.url?scp=84893572194&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:84893572194
SN - 9781557529107
T3 - Optics InfoBase Conference Papers
BT - CLEO
T2 - CLEO: Applications and Technology, CLEO_AT 2011
Y2 - 1 May 2011 through 6 May 2011
ER -