Electro-optical modulator based on the p+-n+-n+ transistor structure integrated on SOI substrate

Wen-Kuei Chuang; Mao Teng Hsu; Shen Horng Chou

Electro-optical modulator based on the p⁺-n⁺-n⁺ transistor structure integrated on SOI substrate

Wen-Kuei Chuang
, Mao Teng Hsu
, Shen Horng Chou

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report a p⁺-n⁺-n⁺ transistor-based electro-optical modulator fabricated on silicon-on-insulator (SOI) substrate. With 100% modulation depth achieved, the rise and fall times were respectively measured to be 60 and 56 ns. The 3 dB bandwidth in the excess of 10.5 MHz was determined from the corresponding device.

Original language	English
Title of host publication	CLEO
Subtitle of host publication	Science and Innovations, CLEO_SI 2011
Publication status	Published - 2011
Event	CLEO: Science and Innovations, CLEO_SI 2011 - Baltimore, MD, United States Duration: 2011 May 1 → 2011 May 6

Other

Other	CLEO: Science and Innovations, CLEO_SI 2011
Country/Territory	United States
City	Baltimore, MD
Period	11-05-01 → 11-05-06

All Science Journal Classification (ASJC) codes

Instrumentation
Atomic and Molecular Physics, and Optics

Cite this

@inproceedings{b07f3e0f1a684a9fb9e2c84fc3670cd4,

title = "Electro-optical modulator based on the p+-n+-n+ transistor structure integrated on SOI substrate",

abstract = "We report a p+-n+-n+ transistor-based electro-optical modulator fabricated on silicon-on-insulator (SOI) substrate. With 100\% modulation depth achieved, the rise and fall times were respectively measured to be 60 and 56 ns. The 3 dB bandwidth in the excess of 10.5 MHz was determined from the corresponding device.",

author = "Wen-Kuei Chuang and Hsu, \{Mao Teng\} and Chou, \{Shen Horng\}",

year = "2011",

language = "English",

isbn = "9781557529107",

booktitle = "CLEO",

note = "CLEO: Science and Innovations, CLEO\_SI 2011 ; Conference date: 01-05-2011 Through 06-05-2011",

}

TY - GEN

T1 - Electro-optical modulator based on the p+-n+-n+ transistor structure integrated on SOI substrate

AU - Chuang, Wen-Kuei

AU - Hsu, Mao Teng

AU - Chou, Shen Horng

PY - 2011

Y1 - 2011

N2 - We report a p+-n+-n+ transistor-based electro-optical modulator fabricated on silicon-on-insulator (SOI) substrate. With 100% modulation depth achieved, the rise and fall times were respectively measured to be 60 and 56 ns. The 3 dB bandwidth in the excess of 10.5 MHz was determined from the corresponding device.

AB - We report a p+-n+-n+ transistor-based electro-optical modulator fabricated on silicon-on-insulator (SOI) substrate. With 100% modulation depth achieved, the rise and fall times were respectively measured to be 60 and 56 ns. The 3 dB bandwidth in the excess of 10.5 MHz was determined from the corresponding device.

UR - https://www.scopus.com/pages/publications/84893610354

UR - https://www.scopus.com/pages/publications/84893610354#tab=citedBy

M3 - Conference contribution

AN - SCOPUS:84893610354

SN - 9781557529107

BT - CLEO

T2 - CLEO: Science and Innovations, CLEO_SI 2011

Y2 - 1 May 2011 through 6 May 2011

ER -

Electro-optical modulator based on the p⁺-n⁺-n⁺ transistor structure integrated on SOI substrate

Abstract

Other

All Science Journal Classification (ASJC) codes

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