Electro-optical modulator based on the p+-n+-n+ transistor structure integrated on SOI substrate

Wen-Kuei Chuang, Mao Teng Hsu, Shen Horng Chou

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report a p+-n+-n+ transistor-based electro-optical modulator fabricated on silicon-on-insulator (SOI) substrate. With 100% modulation depth achieved, the rise and fall times were respectively measured to be 60 and 56 ns. The 3 dB bandwidth in the excess of 10.5 MHz was determined from the corresponding device.

Original languageEnglish
Title of host publicationQuantum Electronics and Laser Science Conference, QELS 2011
Publication statusPublished - 2011
EventQuantum Electronics and Laser Science Conference, QELS 2011 - Baltimore, MD, United States
Duration: 2011 May 12011 May 6

Other

OtherQuantum Electronics and Laser Science Conference, QELS 2011
CountryUnited States
CityBaltimore, MD
Period11-05-0111-05-06

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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