Electro-optical modulator based on the p+-n+-n+ transistor structure integrated on SOI substrate

Wen-Kuei Chuang, Mao Teng Hsu, Shen Horng Chou

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report a p+-n+-n+ transistor-based electro-optical modulator fabricated on silicon-on-insulator (SOI) substrate. With 100% modulation depth achieved, the rise and fall times were respectively measured to be 60 and 56 ns. The 3 dB bandwidth in the excess of 10.5 MHz was determined from the corresponding device.

Original languageEnglish
Title of host publicationQuantum Electronics and Laser Science Conference, QELS 2011
Publication statusPublished - 2011
EventQuantum Electronics and Laser Science Conference, QELS 2011 - Baltimore, MD, United States
Duration: 2011 May 12011 May 6

Other

OtherQuantum Electronics and Laser Science Conference, QELS 2011
CountryUnited States
CityBaltimore, MD
Period11-05-0111-05-06

Fingerprint

Light modulators
modulators
Transistors
transistors
Modulation
insulators
bandwidth
Bandwidth
modulation
Silicon
silicon
Substrates

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

Cite this

Chuang, W-K., Hsu, M. T., & Chou, S. H. (2011). Electro-optical modulator based on the p+-n+-n+ transistor structure integrated on SOI substrate. In Quantum Electronics and Laser Science Conference, QELS 2011
Chuang, Wen-Kuei ; Hsu, Mao Teng ; Chou, Shen Horng. / Electro-optical modulator based on the p+-n+-n+ transistor structure integrated on SOI substrate. Quantum Electronics and Laser Science Conference, QELS 2011. 2011.
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abstract = "We report a p+-n+-n+ transistor-based electro-optical modulator fabricated on silicon-on-insulator (SOI) substrate. With 100{\%} modulation depth achieved, the rise and fall times were respectively measured to be 60 and 56 ns. The 3 dB bandwidth in the excess of 10.5 MHz was determined from the corresponding device.",
author = "Wen-Kuei Chuang and Hsu, {Mao Teng} and Chou, {Shen Horng}",
year = "2011",
language = "English",
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booktitle = "Quantum Electronics and Laser Science Conference, QELS 2011",

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Chuang, W-K, Hsu, MT & Chou, SH 2011, Electro-optical modulator based on the p+-n+-n+ transistor structure integrated on SOI substrate. in Quantum Electronics and Laser Science Conference, QELS 2011. Quantum Electronics and Laser Science Conference, QELS 2011, Baltimore, MD, United States, 11-05-01.

Electro-optical modulator based on the p+-n+-n+ transistor structure integrated on SOI substrate. / Chuang, Wen-Kuei; Hsu, Mao Teng; Chou, Shen Horng.

Quantum Electronics and Laser Science Conference, QELS 2011. 2011.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

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AU - Chuang, Wen-Kuei

AU - Hsu, Mao Teng

AU - Chou, Shen Horng

PY - 2011

Y1 - 2011

N2 - We report a p+-n+-n+ transistor-based electro-optical modulator fabricated on silicon-on-insulator (SOI) substrate. With 100% modulation depth achieved, the rise and fall times were respectively measured to be 60 and 56 ns. The 3 dB bandwidth in the excess of 10.5 MHz was determined from the corresponding device.

AB - We report a p+-n+-n+ transistor-based electro-optical modulator fabricated on silicon-on-insulator (SOI) substrate. With 100% modulation depth achieved, the rise and fall times were respectively measured to be 60 and 56 ns. The 3 dB bandwidth in the excess of 10.5 MHz was determined from the corresponding device.

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M3 - Conference contribution

SN - 9781557529107

BT - Quantum Electronics and Laser Science Conference, QELS 2011

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Chuang W-K, Hsu MT, Chou SH. Electro-optical modulator based on the p+-n+-n+ transistor structure integrated on SOI substrate. In Quantum Electronics and Laser Science Conference, QELS 2011. 2011