Electroabsorption of thin AlAs/GaAs quantum well: Effect of Γ-X valley mixing

C. P. Chang, Yan Ten Lu

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


We formulate the exciton equations in k-space for thin AlGaAs/AlAs/AlGaAs under external electric field. Our model includes both Γ-X valley mixing and multi-band Coulomb interaction. The system is chosen to have a Γ level and an X level nearly degenerate under zero field. The electric field induces a type-I to type-II transition. In this work, we study the excitonic structures and calculate the absorption spectra for this asymmetrical quantum well under various field strengths.

Original languageEnglish
Pages (from-to)949-953
Number of pages5
JournalSolid State Communications
Issue number11
Publication statusPublished - 1994 Mar

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry


Dive into the research topics of 'Electroabsorption of thin AlAs/GaAs quantum well: Effect of Γ-X valley mixing'. Together they form a unique fingerprint.

Cite this