Electroabsorption of thin AlAs/GaAs quantum well: Effect of Γ-X valley mixing

C. P. Chang; Yan Ten Lu

doi:10.1016/0038-1098(94)90358-1

Electroabsorption of thin AlAs/GaAs quantum well: Effect of Γ-X valley mixing

C. P. Chang
, Yan Ten Lu

Department of Physics

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We formulate the exciton equations in k-space for thin AlGaAs/AlAs/AlGaAs under external electric field. Our model includes both Γ-X valley mixing and multi-band Coulomb interaction. The system is chosen to have a Γ level and an X level nearly degenerate under zero field. The electric field induces a type-I to type-II transition. In this work, we study the excitonic structures and calculate the absorption spectra for this asymmetrical quantum well under various field strengths.

Original language	English
Pages (from-to)	949-953
Number of pages	5
Journal	Solid State Communications
Volume	89
Issue number	11
DOIs	https://doi.org/10.1016/0038-1098(94)90358-1
Publication status	Published - 1994 Mar

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(94)90358-1

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@article{282ab046c0b34287b46f5155a4a19b77,

title = "Electroabsorption of thin AlAs/GaAs quantum well: Effect of Γ-X valley mixing",

abstract = "We formulate the exciton equations in k-space for thin AlGaAs/AlAs/AlGaAs under external electric field. Our model includes both Γ-X valley mixing and multi-band Coulomb interaction. The system is chosen to have a Γ level and an X level nearly degenerate under zero field. The electric field induces a type-I to type-II transition. In this work, we study the excitonic structures and calculate the absorption spectra for this asymmetrical quantum well under various field strengths.",

author = "Chang, \{C. P.\} and Lu, \{Yan Ten\}",

note = "Funding Information: Acknowledgement - We would like to thank the Taiwan National Science Council for supporting this work under contract number NSC82-0208-M006-020.",

year = "1994",

month = mar,

doi = "10.1016/0038-1098(94)90358-1",

language = "English",

volume = "89",

pages = "949--953",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Limited",

number = "11",

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TY - JOUR

T1 - Electroabsorption of thin AlAs/GaAs quantum well

T2 - Effect of Γ-X valley mixing

AU - Chang, C. P.

AU - Lu, Yan Ten

N1 - Funding Information: Acknowledgement - We would like to thank the Taiwan National Science Council for supporting this work under contract number NSC82-0208-M006-020.

PY - 1994/3

Y1 - 1994/3

N2 - We formulate the exciton equations in k-space for thin AlGaAs/AlAs/AlGaAs under external electric field. Our model includes both Γ-X valley mixing and multi-band Coulomb interaction. The system is chosen to have a Γ level and an X level nearly degenerate under zero field. The electric field induces a type-I to type-II transition. In this work, we study the excitonic structures and calculate the absorption spectra for this asymmetrical quantum well under various field strengths.

AB - We formulate the exciton equations in k-space for thin AlGaAs/AlAs/AlGaAs under external electric field. Our model includes both Γ-X valley mixing and multi-band Coulomb interaction. The system is chosen to have a Γ level and an X level nearly degenerate under zero field. The electric field induces a type-I to type-II transition. In this work, we study the excitonic structures and calculate the absorption spectra for this asymmetrical quantum well under various field strengths.

UR - https://www.scopus.com/pages/publications/0028396424

UR - https://www.scopus.com/pages/publications/0028396424#tab=citedBy

U2 - 10.1016/0038-1098(94)90358-1

DO - 10.1016/0038-1098(94)90358-1

M3 - Article

AN - SCOPUS:0028396424

SN - 0038-1098

VL - 89

SP - 949

EP - 953

JO - Solid State Communications

JF - Solid State Communications

IS - 11

ER -

Electroabsorption of thin AlAs/GaAs quantum well: Effect of Γ-X valley mixing

Abstract

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