Electrochemical studies of W corrosion for low resistive contact in the 28 nm technology node

Chia Lin Hsu, Dung Ching Perng, Yen Ming Chen, Shu Min Huang, Yu Ting Li, Chang Hung Kung, Chih Hsun Lin, Yu Ru Yang, Chin Fu Lin, Climbing Huang, J. Y. Wu

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Tungsten missing was observed at the interface between contact barrier layer and W in the 28 nm node contact process. The potentiodynamic polarization scans showed that H 2O 2 in the W chemical-mechanical- polishing slurry increased the potential difference between the diborane (B 2H 6) reduced atomic layer deposited (ALD) W and TiN, suggesting that there is a high tendency for galvanic corrosion to occur. This potential difference kept constant, but the corrosion current density increased when the H 2O 2 concentration increased. The TEM image showed the depth of ALD W missing is proportional to the H 2O 2 concentration, which agrees with the electrochemical testing results. ALD W films with various pre- and post-treatments and their correlations with the degree of W missing were also investigated.

Original languageEnglish
Pages (from-to)H162-H165
JournalJournal of the Electrochemical Society
Volume159
Issue number2
DOIs
Publication statusPublished - 2012 Jan 6

Fingerprint

corrosion
Corrosion
Tungsten
Chemical mechanical polishing
Potentiodynamic polarization
diborane
Current density
barrier layers
Transmission electron microscopy
polishing
pretreatment
tungsten
tendencies
Testing
current density
transmission electron microscopy
polarization

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

Hsu, Chia Lin ; Perng, Dung Ching ; Chen, Yen Ming ; Huang, Shu Min ; Li, Yu Ting ; Kung, Chang Hung ; Lin, Chih Hsun ; Yang, Yu Ru ; Lin, Chin Fu ; Huang, Climbing ; Wu, J. Y. / Electrochemical studies of W corrosion for low resistive contact in the 28 nm technology node. In: Journal of the Electrochemical Society. 2012 ; Vol. 159, No. 2. pp. H162-H165.
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abstract = "Tungsten missing was observed at the interface between contact barrier layer and W in the 28 nm node contact process. The potentiodynamic polarization scans showed that H 2O 2 in the W chemical-mechanical- polishing slurry increased the potential difference between the diborane (B 2H 6) reduced atomic layer deposited (ALD) W and TiN, suggesting that there is a high tendency for galvanic corrosion to occur. This potential difference kept constant, but the corrosion current density increased when the H 2O 2 concentration increased. The TEM image showed the depth of ALD W missing is proportional to the H 2O 2 concentration, which agrees with the electrochemical testing results. ALD W films with various pre- and post-treatments and their correlations with the degree of W missing were also investigated.",
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Hsu, CL, Perng, DC, Chen, YM, Huang, SM, Li, YT, Kung, CH, Lin, CH, Yang, YR, Lin, CF, Huang, C & Wu, JY 2012, 'Electrochemical studies of W corrosion for low resistive contact in the 28 nm technology node', Journal of the Electrochemical Society, vol. 159, no. 2, pp. H162-H165. https://doi.org/10.1149/2.094202jes

Electrochemical studies of W corrosion for low resistive contact in the 28 nm technology node. / Hsu, Chia Lin; Perng, Dung Ching; Chen, Yen Ming; Huang, Shu Min; Li, Yu Ting; Kung, Chang Hung; Lin, Chih Hsun; Yang, Yu Ru; Lin, Chin Fu; Huang, Climbing; Wu, J. Y.

In: Journal of the Electrochemical Society, Vol. 159, No. 2, 06.01.2012, p. H162-H165.

Research output: Contribution to journalArticle

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T1 - Electrochemical studies of W corrosion for low resistive contact in the 28 nm technology node

AU - Hsu, Chia Lin

AU - Perng, Dung Ching

AU - Chen, Yen Ming

AU - Huang, Shu Min

AU - Li, Yu Ting

AU - Kung, Chang Hung

AU - Lin, Chih Hsun

AU - Yang, Yu Ru

AU - Lin, Chin Fu

AU - Huang, Climbing

AU - Wu, J. Y.

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AB - Tungsten missing was observed at the interface between contact barrier layer and W in the 28 nm node contact process. The potentiodynamic polarization scans showed that H 2O 2 in the W chemical-mechanical- polishing slurry increased the potential difference between the diborane (B 2H 6) reduced atomic layer deposited (ALD) W and TiN, suggesting that there is a high tendency for galvanic corrosion to occur. This potential difference kept constant, but the corrosion current density increased when the H 2O 2 concentration increased. The TEM image showed the depth of ALD W missing is proportional to the H 2O 2 concentration, which agrees with the electrochemical testing results. ALD W films with various pre- and post-treatments and their correlations with the degree of W missing were also investigated.

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