Electrochemical studies of W corrosion for low resistive contact in the 28 nm technology node

Chia Lin Hsu, Dung Ching Perng, Yen Ming Chen, Shu Min Huang, Yu Ting Li, Chang Hung Kung, Chih Hsun Lin, Yu Ru Yang, Chin Fu Lin, Climbing Huang, J. Y. Wu

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Tungsten missing was observed at the interface between contact barrier layer and W in the 28 nm node contact process. The potentiodynamic polarization scans showed that H 2O 2 in the W chemical-mechanical- polishing slurry increased the potential difference between the diborane (B 2H 6) reduced atomic layer deposited (ALD) W and TiN, suggesting that there is a high tendency for galvanic corrosion to occur. This potential difference kept constant, but the corrosion current density increased when the H 2O 2 concentration increased. The TEM image showed the depth of ALD W missing is proportional to the H 2O 2 concentration, which agrees with the electrochemical testing results. ALD W films with various pre- and post-treatments and their correlations with the degree of W missing were also investigated.

Original languageEnglish
Pages (from-to)H162-H165
JournalJournal of the Electrochemical Society
Volume159
Issue number2
DOIs
Publication statusPublished - 2012

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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