Electrochromic device integrated with GaInP/GaAs/Ge triple-junction solar cell

Jei Li Hou; Chih Hung Wu; Shoou Jinn Chang

doi:10.1109/LED.2014.2385865

Electrochromic device integrated with GaInP/GaAs/Ge triple-junction solar cell

Jei Li Hou, Chih Hung Wu, Shoou Jinn Chang

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We report the fabrication of a complementary electrochromic device (CECD) in the form of glass/indium-tin-oxide (ITO)/NiO/gel-polymer electrode (GPE)/MoO₃/ITO/glass, and the integration of a CECD/GaAs-based triple-junction (TJ) solar cell system. It was found that the maximum transmittance in the bleached state was 68.05% at 580 nm. With a solar radiation intensity of 100 mW/cm², it was found that an optical contrast in transmittance at 580 nm could reach 58.73%. It was also found that the coloration time and bleaching time of the integration CECD/TJ solar cell system were 6 and 15 s, respectively.

Original language	English
Article number	6998011
Pages (from-to)	207-209
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	36
Issue number	2
DOIs	https://doi.org/10.1109/LED.2014.2385865
Publication status	Published - 2015 Feb 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2014.2385865

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@article{f258fb253eed42548cb14078c93e776d,

title = "Electrochromic device integrated with GaInP/GaAs/Ge triple-junction solar cell",

abstract = "We report the fabrication of a complementary electrochromic device (CECD) in the form of glass/indium-tin-oxide (ITO)/NiO/gel-polymer electrode (GPE)/MoO3/ITO/glass, and the integration of a CECD/GaAs-based triple-junction (TJ) solar cell system. It was found that the maximum transmittance in the bleached state was 68.05% at 580 nm. With a solar radiation intensity of 100 mW/cm2, it was found that an optical contrast in transmittance at 580 nm could reach 58.73%. It was also found that the coloration time and bleaching time of the integration CECD/TJ solar cell system were 6 and 15 s, respectively.",

author = "Hou, {Jei Li} and Wu, {Chih Hung} and Chang, {Shoou Jinn}",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.",

year = "2015",

month = feb,

day = "1",

doi = "10.1109/LED.2014.2385865",

language = "English",

volume = "36",

pages = "207--209",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - Electrochromic device integrated with GaInP/GaAs/Ge triple-junction solar cell

AU - Hou, Jei Li

AU - Wu, Chih Hung

AU - Chang, Shoou Jinn

PY - 2015/2/1

Y1 - 2015/2/1

N2 - We report the fabrication of a complementary electrochromic device (CECD) in the form of glass/indium-tin-oxide (ITO)/NiO/gel-polymer electrode (GPE)/MoO3/ITO/glass, and the integration of a CECD/GaAs-based triple-junction (TJ) solar cell system. It was found that the maximum transmittance in the bleached state was 68.05% at 580 nm. With a solar radiation intensity of 100 mW/cm2, it was found that an optical contrast in transmittance at 580 nm could reach 58.73%. It was also found that the coloration time and bleaching time of the integration CECD/TJ solar cell system were 6 and 15 s, respectively.

AB - We report the fabrication of a complementary electrochromic device (CECD) in the form of glass/indium-tin-oxide (ITO)/NiO/gel-polymer electrode (GPE)/MoO3/ITO/glass, and the integration of a CECD/GaAs-based triple-junction (TJ) solar cell system. It was found that the maximum transmittance in the bleached state was 68.05% at 580 nm. With a solar radiation intensity of 100 mW/cm2, it was found that an optical contrast in transmittance at 580 nm could reach 58.73%. It was also found that the coloration time and bleaching time of the integration CECD/TJ solar cell system were 6 and 15 s, respectively.

UR - http://www.scopus.com/inward/record.url?scp=84921871524&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84921871524&partnerID=8YFLogxK

U2 - 10.1109/LED.2014.2385865

DO - 10.1109/LED.2014.2385865

M3 - Article

AN - SCOPUS:84921871524

SN - 0741-3106

VL - 36

SP - 207

EP - 209

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 2

M1 - 6998011

ER -

Electrochromic device integrated with GaInP/GaAs/Ge triple-junction solar cell

Abstract

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