Electrochromic device integrated with GaInP/GaAs/Ge triple-junction solar cell

Jei Li Hou; Chih Hung Wu; Shoou Jinn Chang

doi:10.1109/LED.2014.2385865

Electrochromic device integrated with GaInP/GaAs/Ge triple-junction solar cell

Jei Li Hou
, Chih Hung Wu
, Shoou Jinn Chang

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We report the fabrication of a complementary electrochromic device (CECD) in the form of glass/indium-tin-oxide (ITO)/NiO/gel-polymer electrode (GPE)/MoO₃/ITO/glass, and the integration of a CECD/GaAs-based triple-junction (TJ) solar cell system. It was found that the maximum transmittance in the bleached state was 68.05% at 580 nm. With a solar radiation intensity of 100 mW/cm², it was found that an optical contrast in transmittance at 580 nm could reach 58.73%. It was also found that the coloration time and bleaching time of the integration CECD/TJ solar cell system were 6 and 15 s, respectively.

Original language	English
Article number	6998011
Pages (from-to)	207-209
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	36
Issue number	2
DOIs	https://doi.org/10.1109/LED.2014.2385865
Publication status	Published - 2015 Feb 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2014.2385865

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title = "Electrochromic device integrated with GaInP/GaAs/Ge triple-junction solar cell",

abstract = "We report the fabrication of a complementary electrochromic device (CECD) in the form of glass/indium-tin-oxide (ITO)/NiO/gel-polymer electrode (GPE)/MoO3/ITO/glass, and the integration of a CECD/GaAs-based triple-junction (TJ) solar cell system. It was found that the maximum transmittance in the bleached state was 68.05\% at 580 nm. With a solar radiation intensity of 100 mW/cm2, it was found that an optical contrast in transmittance at 580 nm could reach 58.73\%. It was also found that the coloration time and bleaching time of the integration CECD/TJ solar cell system were 6 and 15 s, respectively.",

author = "Hou, \{Jei Li\} and Wu, \{Chih Hung\} and Chang, \{Shoou Jinn\}",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.",

year = "2015",

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doi = "10.1109/LED.2014.2385865",

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T1 - Electrochromic device integrated with GaInP/GaAs/Ge triple-junction solar cell

AU - Hou, Jei Li

AU - Wu, Chih Hung

AU - Chang, Shoou Jinn

PY - 2015/2/1

Y1 - 2015/2/1

N2 - We report the fabrication of a complementary electrochromic device (CECD) in the form of glass/indium-tin-oxide (ITO)/NiO/gel-polymer electrode (GPE)/MoO3/ITO/glass, and the integration of a CECD/GaAs-based triple-junction (TJ) solar cell system. It was found that the maximum transmittance in the bleached state was 68.05% at 580 nm. With a solar radiation intensity of 100 mW/cm2, it was found that an optical contrast in transmittance at 580 nm could reach 58.73%. It was also found that the coloration time and bleaching time of the integration CECD/TJ solar cell system were 6 and 15 s, respectively.

AB - We report the fabrication of a complementary electrochromic device (CECD) in the form of glass/indium-tin-oxide (ITO)/NiO/gel-polymer electrode (GPE)/MoO3/ITO/glass, and the integration of a CECD/GaAs-based triple-junction (TJ) solar cell system. It was found that the maximum transmittance in the bleached state was 68.05% at 580 nm. With a solar radiation intensity of 100 mW/cm2, it was found that an optical contrast in transmittance at 580 nm could reach 58.73%. It was also found that the coloration time and bleaching time of the integration CECD/TJ solar cell system were 6 and 15 s, respectively.

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DO - 10.1109/LED.2014.2385865

M3 - Article

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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ER -

Electrochromic device integrated with GaInP/GaAs/Ge triple-junction solar cell

Abstract

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