Electrodeposited CuSCN metal-semiconductor-metal high performance deep-ultraviolet photodetector

Hsueh Pin Lin, Xuan Jun Lin, Dung Ching Perng

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Abstract

This study reports a low-cost electrodeposited copper(I) thiocyanate (CuSCN) film as a wide band-gap absorber layer for deep-ultraviolet (DUV) photodetector (PD) applications. Electrodeposited CuSCN films deposited with electrolyte concentrations of 24 mM and 33 mM were evaluated as the absorber layers for planar metal-semiconductor-metal PDs. The best photo-responsivity of the CuSCN PD was found to be as high as 70.3 A/W at a -1 V bias under DUV illumination at 300 nm, which corresponded to an external quantum efficiency of 3.1 × 104%. Furthermore, the DUV-to-visible rejection ratio (R300 nm/R400 nm) of ∼103 was realized. This study demonstrated that the CuSCN film has great potential for low-cost DUV PD applications.

Original languageEnglish
Article number021107
JournalApplied Physics Letters
Volume112
Issue number2
DOIs
Publication statusPublished - 2018 Jan 8

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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