A stoichiometric InSb film was electrodeposited on a nickel (Ni) substrate in a room-temperature ionic liquid, 1-butyl-1-methylpyrrolidinium dicyanamide (BMP-DCA), containing anhydrous InCl3 and SbCl3 with a molar concentration ratio of 1:1. The composition of the deposited InSb film was found to depend on both the applied potential and the deposition charge. Crystalline deposits can be directly obtained at low temperature (60°C) without any post-heat treatment. The optical band gap of the InSb film analyzed by using FTIR spectroscopy measurements was approximately 0.17eV. Results from photocurrent experiments indicate that the electrodeposited InSb film was a p-type semiconductor. IL do it again: Crystallite InSb continuous film was obtained at a low temperature (60°C) from 1-butyl-1-methylpyrrolidinium dicyanamide ionic liquid. Results from photocurrent experiments indicate that the electrodeposited InSb film is a p-type semiconductor.
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