Abstract
With CO2 laser assistance, crystalline silicon nanoclusters were formed in silicon nitride films deposited at a low temperature and without post-annealing using a conventional plasma-enhanced chemical vapour deposition system. The crystalline silicon nanoclusters embedded in silicon nitride matrices were observed from high-resolution transmission electron microscopy (HRTEM) images. According to experimental results of photoluminescence (PL) spectra and HRTEM images, the energy gap E(eV) as a function of diameter d (nm) of crystalline silicon nanoclusters can be expressed as E(eV) = 1.17+(11.6/d2). The intensity and emission energy of the PL spectra of the laser-assisted silicon nitride films increased with the NH3 flow rate. Electroluminescence emission of light-emitting devices using the crystalline silicon nanoclusters was demonstrated.
Original language | English |
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Article number | 275707 |
Journal | Nanotechnology |
Volume | 18 |
Issue number | 27 |
DOIs | |
Publication status | Published - 2007 Jul 11 |
All Science Journal Classification (ASJC) codes
- Bioengineering
- Chemistry(all)
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
- Electrical and Electronic Engineering