Electroluminescence emission of crystalline silicon nanoclusters grown at a low temperature

Tai Cheng Tsai, Li Zhen Yu, Ching Ting Lee

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24 Citations (Scopus)


With CO2 laser assistance, crystalline silicon nanoclusters were formed in silicon nitride films deposited at a low temperature and without post-annealing using a conventional plasma-enhanced chemical vapour deposition system. The crystalline silicon nanoclusters embedded in silicon nitride matrices were observed from high-resolution transmission electron microscopy (HRTEM) images. According to experimental results of photoluminescence (PL) spectra and HRTEM images, the energy gap E(eV) as a function of diameter d (nm) of crystalline silicon nanoclusters can be expressed as E(eV) = 1.17+(11.6/d2). The intensity and emission energy of the PL spectra of the laser-assisted silicon nitride films increased with the NH3 flow rate. Electroluminescence emission of light-emitting devices using the crystalline silicon nanoclusters was demonstrated.

Original languageEnglish
Article number275707
Issue number27
Publication statusPublished - 2007 Jul 11

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering


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