Electroluminescence from n-ZnO nanowires/p-GaN heterostructure light-emitting diodes

Chih Han Chen, Shoou Jinn Chang, Sheng Po Chang, Meng Ju Li, I. Cherng Chen, Ting Jen Hsueh, Cheng Liang Hsu

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96 Citations (Scopus)

Abstract

The investigation explores the fabrication and characteristics of ZnO nanowire (NW)/p-GaN/ZnO NW heterojunction light-emitting diodes (LEDs). Vertically aligned ZnO NWs arrays were grown on the p-GaN substrate. The n-p-n heterojunction LED was fabricated by combining indium tin oxide/glass substrate with the prepared ZnO NWs/p-GaN substrate. The symmetrical rectifying behavior demonstrates that the heterostructure herein was formed with two p-n junction diodes and connected back to back. The room-temperature electroluminescent emission peak at 415 nm was attributed to the band offset at the interface between n-ZnO and p-GaN and defect-related emission from ZnO and GaN. Finally, the photograph indicated the LED clearly emitted blue light.

Original languageEnglish
Article number223101
JournalApplied Physics Letters
Volume95
Issue number22
DOIs
Publication statusPublished - 2009

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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