Electroluminescence from solution grown n-ZnO nanorod/p-GaN- heterostructured light emitting diodes

Saikat Dalui, Chih Chien Lin, Hsin Ying Lee, Shiu Fang Yen, Yao Jung Lee, Ching Ting Lee

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)


To fabricate n-ZnO nanorod/p-GaN-heterostructured light emitting diodes, well-aligned ZnO nanorod arrays were synthesized on metallorganic chemical vapor deposited p-GaN layers on sapphire substrates using low temperature and low cost solution growth techniques. Current-voltage measurements showed the formation of a diode structure with a typical diode characteristic having a turn-on voltage of 4.8 V. Microstructure and room-temperature photoluminescence measurements confirmed the growth of ZnO nanorod arrays with a near-perfect microstructure, stoichiometry, and excellent optical quality. Room-temperature electroluminescence in the blue-violet region with a peak wavelength of ∼398 nm was observed under a forward bias. No defect-related emission was observed in the deep visible region.

Original languageEnglish
JournalJournal of the Electrochemical Society
Issue number5
Publication statusPublished - 2010 Apr 27

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Electroluminescence from solution grown n-ZnO nanorod/p-GaN- heterostructured light emitting diodes'. Together they form a unique fingerprint.

Cite this