Electromigration-induced accelerated consumption of Cu pad in flip chip Sn2.6Ag solder joints

W. J. Deng; Kwang-Lung Lin; Y. T. Chiu; Y. S. Lai

doi:10.1109/ECTC.2011.5898500

Electromigration-induced accelerated consumption of Cu pad in flip chip Sn2.6Ag solder joints

W. J. Deng, Kwang-Lung Lin, Y. T. Chiu, Y. S. Lai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Citations (Scopus)

Abstract

The electromigration-induced accelerate consumption of Cu pad in flip chip Sn2.6Ag solder joint was studied. The under bump metallization on the chip side was 0.5 μm Ti/0.1 μm Cu/2.0 μm Ni, and on the substrate side was 20 μm thick Cu pad. The current stressing was conducted at a current density of 1.0×10⁴ A/cm². The uneven consumption morphology of Cu pad formed after reflow results in local current crowding at the cathodic pad side. The merge of the small concavities gives rise to the large cavities and wavelike morphology of Cu pad. The effect of current crowding at the wave tip caused rapid consumption of Cu pad. The entire 20 μm Cu pad was consumed at the current crowding area after current stressing of 478 h at 1.0×10 ⁴ A/cm². A mechanism was proposed for the accelerate consumption of Cu pad due to current stressing.

Original language	English
Title of host publication	2011 IEEE 61st Electronic Components and Technology Conference, ECTC 2011
Pages	114-117
Number of pages	4
DOIs	https://doi.org/10.1109/ECTC.2011.5898500
Publication status	Published - 2011 Jul 21
Event	2011 61st Electronic Components and Technology Conference, ECTC 2011 - Lake Buena Vista, FL, United States Duration: 2011 May 31 → 2011 Jun 3

Publication series

Name	Proceedings - Electronic Components and Technology Conference
ISSN (Print)	0569-5503

Other

Other	2011 61st Electronic Components and Technology Conference, ECTC 2011
Country/Territory	United States
City	Lake Buena Vista, FL
Period	11-05-31 → 11-06-03

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/ECTC.2011.5898500

Cite this

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title = "Electromigration-induced accelerated consumption of Cu pad in flip chip Sn2.6Ag solder joints",

abstract = "The electromigration-induced accelerate consumption of Cu pad in flip chip Sn2.6Ag solder joint was studied. The under bump metallization on the chip side was 0.5 μm Ti/0.1 μm Cu/2.0 μm Ni, and on the substrate side was 20 μm thick Cu pad. The current stressing was conducted at a current density of 1.0×104 A/cm2. The uneven consumption morphology of Cu pad formed after reflow results in local current crowding at the cathodic pad side. The merge of the small concavities gives rise to the large cavities and wavelike morphology of Cu pad. The effect of current crowding at the wave tip caused rapid consumption of Cu pad. The entire 20 μm Cu pad was consumed at the current crowding area after current stressing of 478 h at 1.0×10 4 A/cm2. A mechanism was proposed for the accelerate consumption of Cu pad due to current stressing.",

author = "Deng, {W. J.} and Kwang-Lung Lin and Chiu, {Y. T.} and Lai, {Y. S.}",

year = "2011",

month = jul,

day = "21",

doi = "10.1109/ECTC.2011.5898500",

language = "English",

isbn = "9781612844978",

series = "Proceedings - Electronic Components and Technology Conference",

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booktitle = "2011 IEEE 61st Electronic Components and Technology Conference, ECTC 2011",

note = "2011 61st Electronic Components and Technology Conference, ECTC 2011 ; Conference date: 31-05-2011 Through 03-06-2011",

}

Deng, WJ, Lin, K-L, Chiu, YT & Lai, YS 2011, Electromigration-induced accelerated consumption of Cu pad in flip chip Sn2.6Ag solder joints. in 2011 IEEE 61st Electronic Components and Technology Conference, ECTC 2011., 5898500, Proceedings - Electronic Components and Technology Conference, pp. 114-117, 2011 61st Electronic Components and Technology Conference, ECTC 2011, Lake Buena Vista, FL, United States, 11-05-31. https://doi.org/10.1109/ECTC.2011.5898500

Electromigration-induced accelerated consumption of Cu pad in flip chip Sn2.6Ag solder joints. / Deng, W. J.; Lin, Kwang-Lung; Chiu, Y. T. et al.
2011 IEEE 61st Electronic Components and Technology Conference, ECTC 2011. 2011. p. 114-117 5898500 (Proceedings - Electronic Components and Technology Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Deng, W. J.

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PY - 2011/7/21

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N2 - The electromigration-induced accelerate consumption of Cu pad in flip chip Sn2.6Ag solder joint was studied. The under bump metallization on the chip side was 0.5 μm Ti/0.1 μm Cu/2.0 μm Ni, and on the substrate side was 20 μm thick Cu pad. The current stressing was conducted at a current density of 1.0×104 A/cm2. The uneven consumption morphology of Cu pad formed after reflow results in local current crowding at the cathodic pad side. The merge of the small concavities gives rise to the large cavities and wavelike morphology of Cu pad. The effect of current crowding at the wave tip caused rapid consumption of Cu pad. The entire 20 μm Cu pad was consumed at the current crowding area after current stressing of 478 h at 1.0×10 4 A/cm2. A mechanism was proposed for the accelerate consumption of Cu pad due to current stressing.

AB - The electromigration-induced accelerate consumption of Cu pad in flip chip Sn2.6Ag solder joint was studied. The under bump metallization on the chip side was 0.5 μm Ti/0.1 μm Cu/2.0 μm Ni, and on the substrate side was 20 μm thick Cu pad. The current stressing was conducted at a current density of 1.0×104 A/cm2. The uneven consumption morphology of Cu pad formed after reflow results in local current crowding at the cathodic pad side. The merge of the small concavities gives rise to the large cavities and wavelike morphology of Cu pad. The effect of current crowding at the wave tip caused rapid consumption of Cu pad. The entire 20 μm Cu pad was consumed at the current crowding area after current stressing of 478 h at 1.0×10 4 A/cm2. A mechanism was proposed for the accelerate consumption of Cu pad due to current stressing.

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Electromigration-induced accelerated consumption of Cu pad in flip chip Sn2.6Ag solder joints

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