Electromigration of Sn-9Zn solder in contact with CU

Kwang Lung Lin, Yen Hsiang Fang

Research output: Contribution to conferencePaper

3 Citations (Scopus)

Abstract

Pb-free solder has become an important issue in electronic industry. Sn-9Zn solder with a relatively low eutectic temperature of 198°C has attracted attentions as an alternative for Sn-37Pb solder. Recent studies have pointed out the importance of electromigration in advanced packaging solder joint like flip chip bonding. This present study investigated the electromigration behavior between Cu and Sn-9Zn solder under a current density of 650 A/cm2 for up to 216 hours. The thickness of the solder specimen was 100 μm while that of the Cu plating was 20 μm. The surface of the Cu plating on both sides of the solder specimen was further protected with an Au layer deposited with sputtering deposition. The experimental results indicated that Cu-Zn inermetallic compound was formed at the interface between Cu and cathodic side of the Sn-9Zn solder, and within the bulk solder near the interface. This compound was identified to be Cu5Zn8 with EDS. These compounds were found to exist as far as 60 μm away from the interface. Consumption of Cu was also observed for the Cu plating on the cathodic side. Similar occurrences were observed on the anodic side but with less extent of compound formation and Cu consumption.

Original languageEnglish
Pages17-20
Number of pages4
Publication statusPublished - 2004 Jan 1
Event2004 Proceedings - 9th International Symposium and Exhibition on Advanced Packaging Materials: Processes, Properties and Interfaces - Atlanta, GA., United States
Duration: 2004 Mar 242004 Mar 26

Other

Other2004 Proceedings - 9th International Symposium and Exhibition on Advanced Packaging Materials: Processes, Properties and Interfaces
CountryUnited States
CityAtlanta, GA.
Period04-03-2404-03-26

Fingerprint

Electromigration
Soldering alloys
Plating
Electronics industry
Eutectics
Sputtering
Energy dispersive spectroscopy
Packaging
Current density

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)

Cite this

Lin, K. L., & Fang, Y. H. (2004). Electromigration of Sn-9Zn solder in contact with CU. 17-20. Paper presented at 2004 Proceedings - 9th International Symposium and Exhibition on Advanced Packaging Materials: Processes, Properties and Interfaces, Atlanta, GA., United States.
Lin, Kwang Lung ; Fang, Yen Hsiang. / Electromigration of Sn-9Zn solder in contact with CU. Paper presented at 2004 Proceedings - 9th International Symposium and Exhibition on Advanced Packaging Materials: Processes, Properties and Interfaces, Atlanta, GA., United States.4 p.
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Lin, KL & Fang, YH 2004, 'Electromigration of Sn-9Zn solder in contact with CU', Paper presented at 2004 Proceedings - 9th International Symposium and Exhibition on Advanced Packaging Materials: Processes, Properties and Interfaces, Atlanta, GA., United States, 04-03-24 - 04-03-26 pp. 17-20.

Electromigration of Sn-9Zn solder in contact with CU. / Lin, Kwang Lung; Fang, Yen Hsiang.

2004. 17-20 Paper presented at 2004 Proceedings - 9th International Symposium and Exhibition on Advanced Packaging Materials: Processes, Properties and Interfaces, Atlanta, GA., United States.

Research output: Contribution to conferencePaper

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N2 - Pb-free solder has become an important issue in electronic industry. Sn-9Zn solder with a relatively low eutectic temperature of 198°C has attracted attentions as an alternative for Sn-37Pb solder. Recent studies have pointed out the importance of electromigration in advanced packaging solder joint like flip chip bonding. This present study investigated the electromigration behavior between Cu and Sn-9Zn solder under a current density of 650 A/cm2 for up to 216 hours. The thickness of the solder specimen was 100 μm while that of the Cu plating was 20 μm. The surface of the Cu plating on both sides of the solder specimen was further protected with an Au layer deposited with sputtering deposition. The experimental results indicated that Cu-Zn inermetallic compound was formed at the interface between Cu and cathodic side of the Sn-9Zn solder, and within the bulk solder near the interface. This compound was identified to be Cu5Zn8 with EDS. These compounds were found to exist as far as 60 μm away from the interface. Consumption of Cu was also observed for the Cu plating on the cathodic side. Similar occurrences were observed on the anodic side but with less extent of compound formation and Cu consumption.

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Lin KL, Fang YH. Electromigration of Sn-9Zn solder in contact with CU. 2004. Paper presented at 2004 Proceedings - 9th International Symposium and Exhibition on Advanced Packaging Materials: Processes, Properties and Interfaces, Atlanta, GA., United States.