TY - JOUR
T1 - Electron backscatter diffraction analysis on the microstructures of electrolytic Cu deposition in the through hole filling process
AU - Ho, C. E.
AU - Liao, C. W.
AU - Pan, C. X.
AU - Chen, H. J.
AU - Kuo, J. C.
AU - Chen, D.
N1 - Funding Information:
This study was supported by the National Science Council (R.O.C.) and Taiwan Uyemura Co., Ltd. through Grant Nos. NSC100-2221-E-155-018-MY3 and NSC102-2622-E-155-004 .
PY - 2013/10/1
Y1 - 2013/10/1
N2 - Through hole (TH) filling by electrolytic Cu deposition has become a critical process for high density interconnection technologies associated with three-dimensional packaging. In this study, the morphological and crystallographic evolutions of the electrolytic Cu TH filling with the plating time (t) were investigated using an optical microscope and a field-emission scanning electron microscope equipped with an electron backscatter diffraction (EBSD) analysis system. The Cu deposition rate in the TH was strongly dependent on t, which was established at a moderate rate of ∼0.3 μm/min at t = 40 min-74 min, then dramatically accelerated to ∼4 μm/min at t = 74 min-80 min (termed "fast deposition regime"), and subsequently decelerated in the final plating regime (t = 80 min-100 min). EBSD analyses showed that the electrolytic Cu predominantly possessed high-angle grain boundaries with strong coincidence site lattices atΣ3 (60° rotation at b111>) andΣ9 (38.9° rotation at b101>) for all t examined. Interestingly, the [111]TD (transverse direction) orientation displayed a relatively strong presence in the initial induction regime, while the [111]TD + [101] TD orientations with large grain sizes became dominant in the fast deposition regime (i.e., t = 74 min-80 min), and there was a very low concentration of the [111]TD orientation in the final deposition regime. This research offered a better understanding of the morphological and crystallographic evolutions in each stage of the electrolytic Cu TH filling.
AB - Through hole (TH) filling by electrolytic Cu deposition has become a critical process for high density interconnection technologies associated with three-dimensional packaging. In this study, the morphological and crystallographic evolutions of the electrolytic Cu TH filling with the plating time (t) were investigated using an optical microscope and a field-emission scanning electron microscope equipped with an electron backscatter diffraction (EBSD) analysis system. The Cu deposition rate in the TH was strongly dependent on t, which was established at a moderate rate of ∼0.3 μm/min at t = 40 min-74 min, then dramatically accelerated to ∼4 μm/min at t = 74 min-80 min (termed "fast deposition regime"), and subsequently decelerated in the final plating regime (t = 80 min-100 min). EBSD analyses showed that the electrolytic Cu predominantly possessed high-angle grain boundaries with strong coincidence site lattices atΣ3 (60° rotation at b111>) andΣ9 (38.9° rotation at b101>) for all t examined. Interestingly, the [111]TD (transverse direction) orientation displayed a relatively strong presence in the initial induction regime, while the [111]TD + [101] TD orientations with large grain sizes became dominant in the fast deposition regime (i.e., t = 74 min-80 min), and there was a very low concentration of the [111]TD orientation in the final deposition regime. This research offered a better understanding of the morphological and crystallographic evolutions in each stage of the electrolytic Cu TH filling.
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U2 - 10.1016/j.tsf.2013.02.089
DO - 10.1016/j.tsf.2013.02.089
M3 - Article
AN - SCOPUS:84901834299
SN - 0040-6090
VL - 544
SP - 412
EP - 418
JO - Thin Solid Films
JF - Thin Solid Films
ER -