Electron-field-emission enhancement of cuo nanowires by uv illumination

Yen Ming Juan; Han Ting Hsueh; Tsung Chieh Cheng; Chen Wei Wu; Shoou Jinn Chang

doi:10.1149/2.004403ssl

Electron-field-emission enhancement of cuo nanowires by uv illumination

Yen Ming Juan, Han Ting Hsueh, Tsung Chieh Cheng, Chen Wei Wu, Shoou Jinn Chang

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17 Citations (Scopus)

Abstract

The authors report the successful growth of CuO nanowires by thermal oxidation of Cu film deposited on CuO/glass template. It was found that we could achieve a higher nanowire density, longer average nanowire length by increasing the Cu film thickness. It was also found that turn-on fields were 14.1, 11.4 and 8.3 V/μm, while the field enhancement factors were 378, 493 and 552, for sample A with 0.5-μm-thick Cu film, sample B with 1-μm-thick Cu film and sample C with 2-μm-thick Cu film, respectively. Furthermore, it was found that we could improve the field emission ability and reduce the turn-on field from by simply illuminating the samples with ultraviolet light.

Original language	English
Pages (from-to)	P30-P32
Journal	ECS Solid State Letters
Volume	3
Issue number	3
DOIs	https://doi.org/10.1149/2.004403ssl
Publication status	Published - 2014

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "Electron-field-emission enhancement of cuo nanowires by uv illumination",

abstract = "The authors report the successful growth of CuO nanowires by thermal oxidation of Cu film deposited on CuO/glass template. It was found that we could achieve a higher nanowire density, longer average nanowire length by increasing the Cu film thickness. It was also found that turn-on fields were 14.1, 11.4 and 8.3 V/μm, while the field enhancement factors were 378, 493 and 552, for sample A with 0.5-μm-thick Cu film, sample B with 1-μm-thick Cu film and sample C with 2-μm-thick Cu film, respectively. Furthermore, it was found that we could improve the field emission ability and reduce the turn-on field from by simply illuminating the samples with ultraviolet light.",

author = "Juan, {Yen Ming} and Hsueh, {Han Ting} and Cheng, {Tsung Chieh} and Wu, {Chen Wei} and Chang, {Shoou Jinn}",

year = "2014",

doi = "10.1149/2.004403ssl",

language = "English",

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journal = "ECS Solid State Letters",

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TY - JOUR

T1 - Electron-field-emission enhancement of cuo nanowires by uv illumination

AU - Juan, Yen Ming

AU - Hsueh, Han Ting

AU - Cheng, Tsung Chieh

AU - Wu, Chen Wei

AU - Chang, Shoou Jinn

PY - 2014

Y1 - 2014

N2 - The authors report the successful growth of CuO nanowires by thermal oxidation of Cu film deposited on CuO/glass template. It was found that we could achieve a higher nanowire density, longer average nanowire length by increasing the Cu film thickness. It was also found that turn-on fields were 14.1, 11.4 and 8.3 V/μm, while the field enhancement factors were 378, 493 and 552, for sample A with 0.5-μm-thick Cu film, sample B with 1-μm-thick Cu film and sample C with 2-μm-thick Cu film, respectively. Furthermore, it was found that we could improve the field emission ability and reduce the turn-on field from by simply illuminating the samples with ultraviolet light.

AB - The authors report the successful growth of CuO nanowires by thermal oxidation of Cu film deposited on CuO/glass template. It was found that we could achieve a higher nanowire density, longer average nanowire length by increasing the Cu film thickness. It was also found that turn-on fields were 14.1, 11.4 and 8.3 V/μm, while the field enhancement factors were 378, 493 and 552, for sample A with 0.5-μm-thick Cu film, sample B with 1-μm-thick Cu film and sample C with 2-μm-thick Cu film, respectively. Furthermore, it was found that we could improve the field emission ability and reduce the turn-on field from by simply illuminating the samples with ultraviolet light.

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JO - ECS Solid State Letters

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Electron-field-emission enhancement of cuo nanowires by uv illumination

Abstract

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