Abstract
Cu rods with a diameter of 10 μm on a flexible silicon substrate were fabricated using the through silicon via (TSV) process and chemical mechanical polishing (CMP). The turn-on field and field enhancement factor (β) of the TSV Cu rods were 28.6 V μm-1 and 1721, respectively. Three-dimensional (3-D) CuO nanowires (NWs) were then grown vertically and laterally on the top and sidewall of the Cu rods via heat treatment in air for various durations. The turn-on field was reduced sharply after CuO NW growth. Longer CuO NWs and higher NW density led to a lower turn-on field. The turn-on fields of samples treated for 0.5, 1, and 5 h were 5.4, 4.9, and 3.5 V μm-1, and the β values were 2546, 2734, and 4262, respectively. The 3-D CuO NWs are suitable for applications that require a flexible substrate.
Original language | English |
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Pages (from-to) | 47292-47297 |
Number of pages | 6 |
Journal | RSC Advances |
Volume | 6 |
Issue number | 53 |
DOIs | |
Publication status | Published - 2016 |
All Science Journal Classification (ASJC) codes
- General Chemistry
- General Chemical Engineering