Electron-spin-resonance transistors for quantum computing in silicon-germanium heterostructures

Rutger Vrijen; Eli Yablonovitch; Kang Wang; Hong Wen Jiang; Alex Balandin; Vwani Roychowdhury; Tal Mor; David DiVincenzo

Electron-spin-resonance transistors for quantum computing in silicon-germanium heterostructures

Rutger Vrijen, Eli Yablonovitch, Kang Wang, Hong Wen Jiang, Alex Balandin, Vwani Roychowdhury, Tal Mor, David DiVincenzo

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

739 Citations (Scopus)

Abstract

A practical field-effect spin-resonance transistor (SRT) design that might lend itself to a near-term demonstration of qubits on a silicon wafer is presented. This transistor is built by using modern electronic band-structure engineering and epitaxial growth techniques.

Original language	English
Pages (from-to)	12306-12301
Number of pages	6
Journal	Physical Review A - Atomic, Molecular, and Optical Physics
Volume	62
Issue number	1
Publication status	Published - 2000 Jul

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics

Cite this

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title = "Electron-spin-resonance transistors for quantum computing in silicon-germanium heterostructures",

abstract = "A practical field-effect spin-resonance transistor (SRT) design that might lend itself to a near-term demonstration of qubits on a silicon wafer is presented. This transistor is built by using modern electronic band-structure engineering and epitaxial growth techniques.",

author = "Rutger Vrijen and Eli Yablonovitch and Kang Wang and Jiang, {Hong Wen} and Alex Balandin and Vwani Roychowdhury and Tal Mor and David DiVincenzo",

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language = "English",

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T1 - Electron-spin-resonance transistors for quantum computing in silicon-germanium heterostructures

AU - Vrijen, Rutger

AU - Yablonovitch, Eli

AU - Wang, Kang

AU - Jiang, Hong Wen

AU - Balandin, Alex

AU - Roychowdhury, Vwani

AU - Mor, Tal

AU - DiVincenzo, David

PY - 2000/7

Y1 - 2000/7

N2 - A practical field-effect spin-resonance transistor (SRT) design that might lend itself to a near-term demonstration of qubits on a silicon wafer is presented. This transistor is built by using modern electronic band-structure engineering and epitaxial growth techniques.

AB - A practical field-effect spin-resonance transistor (SRT) design that might lend itself to a near-term demonstration of qubits on a silicon wafer is presented. This transistor is built by using modern electronic band-structure engineering and epitaxial growth techniques.

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M3 - Article

AN - SCOPUS:0034226818

SN - 1050-2947

VL - 62

SP - 12306

EP - 12301

JO - Physical Review A - Atomic, Molecular, and Optical Physics

JF - Physical Review A - Atomic, Molecular, and Optical Physics

IS - 1

ER -

Electron-spin-resonance transistors for quantum computing in silicon-germanium heterostructures

Abstract

All Science Journal Classification (ASJC) codes

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