Electron transport in In-rich in xGa 1-xN films

Shih Kai Lin, Kun Ta Wu, Chao Ping Huang, C. T. Liang, Y. H. Chang, Y. F. Chen, P. H. Chang, N. C. Chen, C. A. Chang, H. C. Peng, C. F. Shih, K. S. Liu, T. Y. Liu

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Abstract

We have performed electrical transport measurements on metal-organic vapor phase epitaxy grown In-rich In xGa 1-xN (x= 1, 0.98, and 0.92) films. Within the experimental error, the electron density in InGaN films is temperature independent over a wide temperature range (4 K ≤ T ≤ 285 K). Therefore, In xGa 1-xN (0.92 ≤ x ≤ 1) films can be regarded as degenerate semiconductor systems. The experimental results demonstrate that electron transport in In-rich In xGa 1-xN (x=l, 0.98, and 0.92) films is metalliclike. This is supported by the temperature dependence of the density, resistivity, and mobility which is similar to that of a metal. We suggest that over the whole measuring temperature range residue imperfection scattering limits the electron mobility in In-rich In xGa 1-xN (x=1, 0.98, and 0.92) films.

Original languageEnglish
Article number046101
JournalJournal of Applied Physics
Volume97
Issue number4
DOIs
Publication statusPublished - 2005 Feb 15

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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