Electronic and atomic structures of the Sr 3 Ir 4 Sn 13 single crystal: A possible charge density wave material

H. T. Wang, M. K. Srivastava, C. C. Wu, S. H. Hsieh, Y. F. Wang, Y. C. Shao, Y. H. Liang, C. H. Du, J. W. Chiou, C. M. Cheng, J. L. Chen, C. W. Pao, J. F. Lee, C. N. Kuo, C. S. Lue, M. K. Wu, W. F. Pong

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X-ray scattering (XRS), x-ray absorption near-edge structure (XANES) and extended x-ray absorption fine structure (EXAFS) spectroscopic techniques were used to study the electronic and atomic structures of the high-quality Sr 3 Ir 4 Sn 13 (SIS) single crystal below and above the transition temperature (T ∗ â ‰147 K). The evolution of a series of modulated satellite peaks below the transition temperature in the XRS experiment indicated the formation of a possible charge density wave (CDW) in the (110) plane. The EXAFS phase derivative analysis supports the CDW-like formation by revealing different bond distances [Sn 1(2) -Sn 2 ] below and above T ∗ in the (110) plane. XANES spectra at the Ir L 3 -edge and Sn K-edge demonstrated an increase (decrease) in the unoccupied (occupied) density of Ir 5d-derived states and a nearly constant density of Sn 5p-derived states at temperatures T < T ∗ in the (110) plane. These observations clearly suggest that the Ir 5d-derived states are closely related to the anomalous resistivity transition. Accordingly, a close relationship exists between local electronic and atomic structures and the CDW-like phase in the SIS single crystal.

Original languageEnglish
Article number40886
JournalScientific reports
Publication statusPublished - 2017 Jan 20

All Science Journal Classification (ASJC) codes

  • General


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