Electronic and bonding structures of amorphous Si-C-N thin films by x-ray absorption spectroscopy

H. M. Tsai, J. C. Jan, J. W. Chiou, W. F. Pong, M. H. Tsai, Y. K. Chang, Y. Y. Chen, Y. W. Yang, L. J. Lai, J. J. Wu, C. T. Wu, K. H. Chen, L. C. Chen

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Abstract

X-ray absorption near edge structure (XANES) spectra of hard amorphous a-Si-C-N thin films with various compositions were measured at the C and N K-edge using sample drain current and fluorescent modes. The C K-edge XANES spectra of a-Si-C-N contain a relatively large 1s → π* peak, indicating that a substantial percentage of carbon atoms in the a-Si-C-N films have sp2 or graphite-like bonding. Both the observed sp2 intensity and the Young's modulus decrease with an increase in the carbon content. For N K-edge XANES spectra of the a-Si-C-N films we find the emergence of a sharp peak near the threshold when the carbon content is larger than between 9% and 36%, which indicates that carbon and nitrogen atoms tend to form local graphitic carbon nitride.

Original languageEnglish
Pages (from-to)2393-2395
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number15
DOIs
Publication statusPublished - 2001 Oct 8

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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