Electronic and bonding structures of amorphous Si-C-N thin films by x-ray absorption spectroscopy

H. M. Tsai; J. C. Jan; J. W. Chiou; W. F. Pong; M. H. Tsai; Y. K. Chang; Y. Y. Chen; Y. W. Yang; L. J. Lai; J. J. Wu; C. T. Wu; K. H. Chen; L. C. Chen

doi:10.1063/1.1409275

Electronic and bonding structures of amorphous Si-C-N thin films by x-ray absorption spectroscopy

H. M. Tsai, J. C. Jan, J. W. Chiou, W. F. Pong, M. H. Tsai, Y. K. Chang, Y. Y. Chen, Y. W. Yang, L. J. Lai, J. J. Wu, C. T. Wu, K. H. Chen, L. C. Chen

Department of Chemical Engineering

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8 Citations (Scopus)

Abstract

X-ray absorption near edge structure (XANES) spectra of hard amorphous a-Si-C-N thin films with various compositions were measured at the C and N K-edge using sample drain current and fluorescent modes. The C K-edge XANES spectra of a-Si-C-N contain a relatively large 1s → π* peak, indicating that a substantial percentage of carbon atoms in the a-Si-C-N films have sp² or graphite-like bonding. Both the observed sp² intensity and the Young's modulus decrease with an increase in the carbon content. For N K-edge XANES spectra of the a-Si-C-N films we find the emergence of a sharp peak near the threshold when the carbon content is larger than between 9% and 36%, which indicates that carbon and nitrogen atoms tend to form local graphitic carbon nitride.

Original language	English
Pages (from-to)	2393-2395
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	15
DOIs	https://doi.org/10.1063/1.1409275
Publication status	Published - 2001 Oct 8

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1409275

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title = "Electronic and bonding structures of amorphous Si-C-N thin films by x-ray absorption spectroscopy",

abstract = "X-ray absorption near edge structure (XANES) spectra of hard amorphous a-Si-C-N thin films with various compositions were measured at the C and N K-edge using sample drain current and fluorescent modes. The C K-edge XANES spectra of a-Si-C-N contain a relatively large 1s → π* peak, indicating that a substantial percentage of carbon atoms in the a-Si-C-N films have sp2 or graphite-like bonding. Both the observed sp2 intensity and the Young's modulus decrease with an increase in the carbon content. For N K-edge XANES spectra of the a-Si-C-N films we find the emergence of a sharp peak near the threshold when the carbon content is larger than between 9% and 36%, which indicates that carbon and nitrogen atoms tend to form local graphitic carbon nitride.",

author = "Tsai, {H. M.} and Jan, {J. C.} and Chiou, {J. W.} and Pong, {W. F.} and Tsai, {M. H.} and Chang, {Y. K.} and Chen, {Y. Y.} and Yang, {Y. W.} and Lai, {L. J.} and Wu, {J. J.} and Wu, {C. T.} and Chen, {K. H.} and Chen, {L. C.}",

year = "2001",

month = oct,

day = "8",

doi = "10.1063/1.1409275",

language = "English",

volume = "79",

pages = "2393--2395",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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Electronic and bonding structures of amorphous Si-C-N thin films by x-ray absorption spectroscopy. / Tsai, H. M.; Jan, J. C.; Chiou, J. W.; Pong, W. F.; Tsai, M. H.; Chang, Y. K.; Chen, Y. Y.; Yang, Y. W.; Lai, L. J.; Wu, J. J.; Wu, C. T.; Chen, K. H.; Chen, L. C.

In: Applied Physics Letters, Vol. 79, No. 15, 08.10.2001, p. 2393-2395.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Electronic and bonding structures of amorphous Si-C-N thin films by x-ray absorption spectroscopy

AU - Tsai, H. M.

AU - Jan, J. C.

AU - Chiou, J. W.

AU - Pong, W. F.

AU - Tsai, M. H.

AU - Chang, Y. K.

AU - Chen, Y. Y.

AU - Yang, Y. W.

AU - Lai, L. J.

AU - Wu, J. J.

AU - Wu, C. T.

AU - Chen, K. H.

AU - Chen, L. C.

PY - 2001/10/8

Y1 - 2001/10/8

N2 - X-ray absorption near edge structure (XANES) spectra of hard amorphous a-Si-C-N thin films with various compositions were measured at the C and N K-edge using sample drain current and fluorescent modes. The C K-edge XANES spectra of a-Si-C-N contain a relatively large 1s → π* peak, indicating that a substantial percentage of carbon atoms in the a-Si-C-N films have sp2 or graphite-like bonding. Both the observed sp2 intensity and the Young's modulus decrease with an increase in the carbon content. For N K-edge XANES spectra of the a-Si-C-N films we find the emergence of a sharp peak near the threshold when the carbon content is larger than between 9% and 36%, which indicates that carbon and nitrogen atoms tend to form local graphitic carbon nitride.

AB - X-ray absorption near edge structure (XANES) spectra of hard amorphous a-Si-C-N thin films with various compositions were measured at the C and N K-edge using sample drain current and fluorescent modes. The C K-edge XANES spectra of a-Si-C-N contain a relatively large 1s → π* peak, indicating that a substantial percentage of carbon atoms in the a-Si-C-N films have sp2 or graphite-like bonding. Both the observed sp2 intensity and the Young's modulus decrease with an increase in the carbon content. For N K-edge XANES spectra of the a-Si-C-N films we find the emergence of a sharp peak near the threshold when the carbon content is larger than between 9% and 36%, which indicates that carbon and nitrogen atoms tend to form local graphitic carbon nitride.

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Electronic and bonding structures of amorphous Si-C-N thin films by x-ray absorption spectroscopy

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