Electronic and optical properties of doped graphene

The diverse electronic and optical properties of doped graphene with chosen densities of Si, B, and N guest atoms are investigated with the use of the tight-binding model. The main characteristics of the energy dispersion are substantially modified by doping. This includes the opening of a band gap, a change in the number of energy subbands, and a shift in Fermi levels. The presence of different dopants in graphene greatly diversifies the optical-absorption spectra through changes in the spectral frequency, intensity, and absorption structures. Doping gives rise to more excitation channels, leading to unique spectral structures as well as fluctuation in the absorption frequency and intensity. Our theoretical predictions provide a clear understanding of the electronic and optical properties of graphene-related systems, which could be helpful in the designing of novel electronic, photonic and optoelectronic devices based on these materials.