@inproceedings{5f876046219d4ecfba8c91baa998fb99,
title = "Electronic properties of III-nitride surfaces and interfaces studied by scanning photoelectron microscopy and spectroscopy",
abstract = "We report on a method based on cross-sectional scanning photoelectron microscopy and spectroscopy (XSPEM/S) for studying electronic structure of III-nitride surfaces and interfaces on a submicrometer scale. Cross-sectional III-nitride surfaces prepared by in situ cleavage were investigated to eliminate the polarization effects associated with the interface charges/dipoles normal to the cleaved surface. In contrast to the as-grown polar surfaces which show strong surface band bending, the cleaved nonpolar surfaces have been found to be under the flat-band conditions. Therefore, both doping and compositional junctions can be directly visualized at the cleaved nonpolar surfaces. Additionally, we show that the {"}intrinsic{"} valence band offsets at the cleaved III-nitride heterojunctions can be unambiguously determined.",
author = "Kuo, {Cheng Tai} and Lee, {Hong Mao} and Wu, {Chung Lin} and Shiu, {Hung Wei} and Chen, {Chia Hao} and Shangjr Gwo",
year = "2010",
month = jul,
day = "7",
language = "English",
isbn = "9781605111759",
series = "Materials Research Society Symposium Proceedings",
pages = "87--92",
booktitle = "III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions",
note = "2009 MRS Fall Meeting ; Conference date: 30-11-2009 Through 04-12-2009",
}