Electronic properties of III-nitride surfaces and interfaces studied by scanning photoelectron microscopy and spectroscopy

Cheng Tai Kuo, Hong Mao Lee, Chung Lin Wu, Hung Wei Shiu, Chia Hao Chen, Shangjr Gwo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report on a method based on cross-sectional scanning photoelectron microscopy and spectroscopy (XSPEM/S) for studying electronic structure of III-nitride surfaces and interfaces on a submicrometer scale. Cross-sectional III-nitride surfaces prepared by in situ cleavage were investigated to eliminate the polarization effects associated with the interface charges/dipoles normal to the cleaved surface. In contrast to the as-grown polar surfaces which show strong surface band bending, the cleaved nonpolar surfaces have been found to be under the flat-band conditions. Therefore, both doping and compositional junctions can be directly visualized at the cleaved nonpolar surfaces. Additionally, we show that the "intrinsic" valence band offsets at the cleaved III-nitride heterojunctions can be unambiguously determined.

Original languageEnglish
Title of host publicationIII-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions
Pages87-92
Number of pages6
Publication statusPublished - 2010 Jul 7
Event2009 MRS Fall Meeting - Boston, MA, United States
Duration: 2009 Nov 302009 Dec 4

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1202
ISSN (Print)0272-9172

Other

Other2009 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period09-11-3009-12-04

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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