Electronic Raman scattering from the hole-spin composite states in La2-xSrxCuO4

S. Sugai, T. Ido, H. Takagi, S. Uchida, M. Sato, S. Shamoto

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)


Electronic Raman scattering was measured in the insulator, superconductor, and "normal metal" phases of La-xSrxCuO4. When holes are doped, the Alg spectra show non-"normal Fermi liquid" behavior. The imaginary part of the experimentally obtained susceptibility is composed of the ω-proportional part below ω∼T and the weakly ω-dependent part up to over 7000 cm-1. The initial gradient increases, on cooling, as in the case of the marginal Fermi liquid model. The Blg spectra have leading edges of which energies decrease with the increase of doping.

Original languageEnglish
Pages (from-to)365-369
Number of pages5
JournalSolid State Communications
Issue number3
Publication statusPublished - 1990 Oct

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry


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