Electronic structure of black SmS. II. Angle-resolved photoemission spectroscopy

T. Ito, Ashish Atma Chainani, H. Kumigashira, T. Takahashi, N. K. Sato

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

We have studied the electronic band structure of semiconducting black SmS with high-resolution angle-resolved photoemission spectroscopy (ARPES). The valence band consists of two well-separated groups of bands: almost nondispersive bands near EF and highly dispersive bands at higher binding energy. The former is ascribed to the Sm2+ (4f6→4f5) multiplet and the latter to mainly the S 3p states. We found a small but distinct energy dispersion in the Sm 4f-derived bands near EF. This indicates a strong hybridization between the "localized" Sm 4f electrons and the "itinerant" conduction electrons, leading to the "delocalized" Sm 4f states in mixed-valent SmS. We have compared the present ARPES results with a recent periodic Anderson model calculation.

Original languageEnglish
Article number155202
Pages (from-to)1552021-1552024
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume65
Issue number15
Publication statusPublished - 2002 Apr 15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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