Electronic structure of carbon-free silicon oxynitride films grown using an organic precursor hexamethyl-disilazane

A. Chainani, S. K. Nema, P. Kikani, P. I. John

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Silicon oxynitride films are grown by plasma-enhanced chemical vapour deposition on single-crystal Si(100) and textured Si solar cells, using a safe organic precursor, hexamethyl-disilazane. Using the Lucovsky-Phillips criterion of bond coordination constraints, we grow high-quality thin (∼20 Å) and thick (up to 2700 Å) films which are carbon free (< 1.0%) as characterized by x-ray photoemission spectroscopy (XPS) and Auger electron spectroscopy depth profiles. Core-level and valence band XPS is used to conclusively identify oxynitride bonding and band gap reduction in SiOxNy. For a λ/4 'blue' anti-reflection coating on the solar cells with uniform thickness (870 ± 15 Å) and composition (SiO1.6±0.1N0.3±0.05), an efficiency (AM 1) increase of 1% is obtained.

Original languageEnglish
Pages (from-to)L44-L47
JournalJournal of Physics D: Applied Physics
Volume35
Issue number11
DOIs
Publication statusPublished - 2002 Jun 7

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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