Abstract
Silicon oxynitride films are grown by plasma-enhanced chemical vapour deposition on single-crystal Si(100) and textured Si solar cells, using a safe organic precursor, hexamethyl-disilazane. Using the Lucovsky-Phillips criterion of bond coordination constraints, we grow high-quality thin (∼20 Å) and thick (up to 2700 Å) films which are carbon free (< 1.0%) as characterized by x-ray photoemission spectroscopy (XPS) and Auger electron spectroscopy depth profiles. Core-level and valence band XPS is used to conclusively identify oxynitride bonding and band gap reduction in SiOxNy. For a λ/4 'blue' anti-reflection coating on the solar cells with uniform thickness (870 ± 15 Å) and composition (SiO1.6±0.1N0.3±0.05), an efficiency (AM 1) increase of 1% is obtained.
Original language | English |
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Article number | 103 |
Pages (from-to) | L44-L47 |
Journal | Journal of Physics D: Applied Physics |
Volume | 35 |
Issue number | 11 |
DOIs | |
Publication status | Published - 2002 Jun 7 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Acoustics and Ultrasonics
- Surfaces, Coatings and Films