Electronic structure of (formula presented) comparison between substitutional and vacancy doping

T. Yokoya; T. Sato; H. Fujisawa; T. Takahashi; A. Chainani; M. Onoda

doi:10.1103/PhysRevB.59.1815

Electronic structure of (formula presented) comparison between substitutional and vacancy doping

T. Yokoya, T. Sato, H. Fujisawa, T. Takahashi, A. Chainani, M. Onoda

Department of Physics

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The change of the electronic structure across the metal-insulator transition in a Mott-Hubbard system (Formula presented) has been investigated by x-ray absorption and photoemission spectroscopy. The results are compared with (Formula presented) where hole doping is achieved by excess oxygen instead of Sr substitution. It is found that additional doped-hole states are created in the insulator gap for both cases, while the density of states at the Fermi level in (Formula presented) is nearly half of that in (Formula presented) at the same nominal doping. This suggests a strong reduction in the mobility of carriers due to cation vacancies produced by excess oxygen.

Original language	English
Pages (from-to)	1815-1818
Number of pages	4
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	59
Issue number	3
DOIs	https://doi.org/10.1103/PhysRevB.59.1815
Publication status	Published - 1999

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.59.1815

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abstract = "The change of the electronic structure across the metal-insulator transition in a Mott-Hubbard system (Formula presented) has been investigated by x-ray absorption and photoemission spectroscopy. The results are compared with (Formula presented) where hole doping is achieved by excess oxygen instead of Sr substitution. It is found that additional doped-hole states are created in the insulator gap for both cases, while the density of states at the Fermi level in (Formula presented) is nearly half of that in (Formula presented) at the same nominal doping. This suggests a strong reduction in the mobility of carriers due to cation vacancies produced by excess oxygen.",

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AU - Yokoya, T.

AU - Sato, T.

AU - Fujisawa, H.

AU - Takahashi, T.

AU - Chainani, A.

AU - Onoda, M.

PY - 1999

Y1 - 1999

N2 - The change of the electronic structure across the metal-insulator transition in a Mott-Hubbard system (Formula presented) has been investigated by x-ray absorption and photoemission spectroscopy. The results are compared with (Formula presented) where hole doping is achieved by excess oxygen instead of Sr substitution. It is found that additional doped-hole states are created in the insulator gap for both cases, while the density of states at the Fermi level in (Formula presented) is nearly half of that in (Formula presented) at the same nominal doping. This suggests a strong reduction in the mobility of carriers due to cation vacancies produced by excess oxygen.

AB - The change of the electronic structure across the metal-insulator transition in a Mott-Hubbard system (Formula presented) has been investigated by x-ray absorption and photoemission spectroscopy. The results are compared with (Formula presented) where hole doping is achieved by excess oxygen instead of Sr substitution. It is found that additional doped-hole states are created in the insulator gap for both cases, while the density of states at the Fermi level in (Formula presented) is nearly half of that in (Formula presented) at the same nominal doping. This suggests a strong reduction in the mobility of carriers due to cation vacancies produced by excess oxygen.

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Electronic structure of (formula presented) comparison between substitutional and vacancy doping

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