Electronic structures of In1-xGaxAs-InP strained-layer quantum wells

Mau Phon Houng, Yia Chung Chang

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17 Citations (Scopus)

Abstract

The band structures of In1-xGaxAs-InP strained-layer quantum wells are investigated theoretically in the bond-orbital model. For small x, the well material is subject to a compressive biaxial strain which lifts the HH1 subband further apart from the LH1 subband, resulting in smaller in-plane effective mass for holes. For large x, the strain becomes tensile and the LH1 subband is lifted upward with respect to the HHl subband. For x near the critical value, where the HHl and LHl energy levels cross each other, the valence-band structure undergoes a direct-to-indirect transition.

Original languageEnglish
Pages (from-to)3096-3100
Number of pages5
JournalJournal of Applied Physics
Volume65
Issue number8
DOIs
Publication statusPublished - 1989 Dec 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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