Electronic transitions in a Ge rich strain-symmetrized Si8Ge32 superlattice measured by photoreflectance spectroscopy

P. A. Dafesh, V. Arbet, K. L. Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Using photoreflectance spectroscopy, fifteen electronic transitions have been measured from a 60 period Si8Ge32 superlattice grown on a Si0.2Ge0.8 buffer layer on 〈100〉 Si. The superlattice transitions fit well to a third derivative functional form and most of their energies were determined using a one band envelope-function model, including strain effects. The temperature dependences of the E0 transition in bulk Ge and in the Si8Ge32 superlattice were also fit to a nonlinear functional form.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsFred H. Pollak, Manuel Cardona, David E. Aspnes
PublisherPubl by Int Soc for Optical Engineering
Pages308-319
Number of pages12
ISBN (Print)0819403377
Publication statusPublished - 1990
EventInternational Conference on Modulation Spectroscopy - San Diego, CA, USA
Duration: 1990 Mar 191990 Mar 21

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume1286
ISSN (Print)0277-786X

Conference

ConferenceInternational Conference on Modulation Spectroscopy
CitySan Diego, CA, USA
Period90-03-1990-03-21

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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