Electronic transitions in a Ge rich strain-symmetrized Si8Ge32 superlattice measured by photoreflectance spectroscopy

P. A. Dafesh; V. Arbet; K. L. Wang

Electronic transitions in a Ge rich strain-symmetrized Si₈Ge₃₂ superlattice measured by photoreflectance spectroscopy

P. A. Dafesh, V. Arbet, K. L. Wang

College of Electrical Engineering and Computer Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

Using photoreflectance spectroscopy, fifteen electronic transitions have been measured from a 60 period Si₈Ge₃₂ superlattice grown on a Si_0.2Ge_0.8 buffer layer on 〈100〉 Si. The superlattice transitions fit well to a third derivative functional form and most of their energies were determined using a one band envelope-function model, including strain effects. The temperature dependences of the E₀ transition in bulk Ge and in the Si₈Ge₃₂ superlattice were also fit to a nonlinear functional form.

Original language	English
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Editors	Fred H. Pollak, Manuel Cardona, David E. Aspnes
Publisher	Publ by Int Soc for Optical Engineering
Pages	308-319
Number of pages	12
ISBN (Print)	0819403377
Publication status	Published - 1990
Event	International Conference on Modulation Spectroscopy - San Diego, CA, USA Duration: 1990 Mar 19 → 1990 Mar 21

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	1286
ISSN (Print)	0277-786X

Conference

Conference	International Conference on Modulation Spectroscopy
City	San Diego, CA, USA
Period	90-03-19 → 90-03-21

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Cite this

Dafesh, P. A., Arbet, V., & Wang, K. L. (1990). Electronic transitions in a Ge rich strain-symmetrized Si₈Ge₃₂ superlattice measured by photoreflectance spectroscopy. In F. H. Pollak, M. Cardona, & D. E. Aspnes (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (pp. 308-319). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 1286). Publ by Int Soc for Optical Engineering.

Dafesh, P. A. ; Arbet, V. ; Wang, K. L. / Electronic transitions in a Ge rich strain-symmetrized Si₈Ge₃₂ superlattice measured by photoreflectance spectroscopy. Proceedings of SPIE - The International Society for Optical Engineering. editor / Fred H. Pollak ; Manuel Cardona ; David E. Aspnes. Publ by Int Soc for Optical Engineering, 1990. pp. 308-319 (Proceedings of SPIE - The International Society for Optical Engineering).

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abstract = "Using photoreflectance spectroscopy, fifteen electronic transitions have been measured from a 60 period Si8Ge32 superlattice grown on a Si0.2Ge0.8 buffer layer on 〈100〉 Si. The superlattice transitions fit well to a third derivative functional form and most of their energies were determined using a one band envelope-function model, including strain effects. The temperature dependences of the E0 transition in bulk Ge and in the Si8Ge32 superlattice were also fit to a nonlinear functional form.",

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year = "1990",

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series = "Proceedings of SPIE - The International Society for Optical Engineering",

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Dafesh, PA, Arbet, V & Wang, KL 1990, Electronic transitions in a Ge rich strain-symmetrized Si₈Ge₃₂ superlattice measured by photoreflectance spectroscopy. in FH Pollak, M Cardona & DE Aspnes (eds), Proceedings of SPIE - The International Society for Optical Engineering. Proceedings of SPIE - The International Society for Optical Engineering, vol. 1286, Publ by Int Soc for Optical Engineering, pp. 308-319, International Conference on Modulation Spectroscopy, San Diego, CA, USA, 90-03-19.

Electronic transitions in a Ge rich strain-symmetrized Si₈Ge₃₂ superlattice measured by photoreflectance spectroscopy. / Dafesh, P. A.; Arbet, V.; Wang, K. L.
Proceedings of SPIE - The International Society for Optical Engineering. ed. / Fred H. Pollak; Manuel Cardona; David E. Aspnes. Publ by Int Soc for Optical Engineering, 1990. p. 308-319 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 1286).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Electronic transitions in a Ge rich strain-symmetrized Si8Ge32 superlattice measured by photoreflectance spectroscopy

AU - Dafesh, P. A.

AU - Arbet, V.

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PY - 1990

Y1 - 1990

N2 - Using photoreflectance spectroscopy, fifteen electronic transitions have been measured from a 60 period Si8Ge32 superlattice grown on a Si0.2Ge0.8 buffer layer on 〈100〉 Si. The superlattice transitions fit well to a third derivative functional form and most of their energies were determined using a one band envelope-function model, including strain effects. The temperature dependences of the E0 transition in bulk Ge and in the Si8Ge32 superlattice were also fit to a nonlinear functional form.

AB - Using photoreflectance spectroscopy, fifteen electronic transitions have been measured from a 60 period Si8Ge32 superlattice grown on a Si0.2Ge0.8 buffer layer on 〈100〉 Si. The superlattice transitions fit well to a third derivative functional form and most of their energies were determined using a one band envelope-function model, including strain effects. The temperature dependences of the E0 transition in bulk Ge and in the Si8Ge32 superlattice were also fit to a nonlinear functional form.

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M3 - Conference contribution

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T3 - Proceedings of SPIE - The International Society for Optical Engineering

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BT - Proceedings of SPIE - The International Society for Optical Engineering

A2 - Pollak, Fred H.

A2 - Cardona, Manuel

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PB - Publ by Int Soc for Optical Engineering

T2 - International Conference on Modulation Spectroscopy

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Dafesh PA, Arbet V, Wang KL. Electronic transitions in a Ge rich strain-symmetrized Si₈Ge₃₂ superlattice measured by photoreflectance spectroscopy. In Pollak FH, Cardona M, Aspnes DE, editors, Proceedings of SPIE - The International Society for Optical Engineering. Publ by Int Soc for Optical Engineering. 1990. p. 308-319. (Proceedings of SPIE - The International Society for Optical Engineering).