Abstract
The electronic transport properties in a graded-period delta-doped superlattice have been studied. A novel negative differential conductivity (NDC) performance is exhibited due to the avalanche multiplications in the superlattice periods. Holes, created by the avalanche multiplications, play an important role in the transport characteristics. An interesting hysteresis phenomenon is also exhibited owing to the “trapped” holes. The significant control voltage ratio, VS/VH, of the studied structure introduces a good potential for application on the switching field.
| Original language | English |
|---|---|
| Pages (from-to) | L7-L9 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 29 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1990 Jan |
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
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Liu, W. C., Wang, R. L., Lour, W. S., Sun, C. Y., & Hong, C. C. (1990). Electronic Transport in Graded-Period Delta-Doped Superlattice. Japanese Journal of Applied Physics, 29(1), L7-L9. https://doi.org/10.1143/JJAP.29.L7