Electronic versus lattice match for metal-semiconductor epitaxial growth: Pb on Ge(111)

S. J. Tang, Chang Yeh Lee, Chien Chung Huang, Tay Rong Chang, Cheng Maw Cheng, Ku Ding Tsuei, H. T. Jeng, V. Yeh, Tai Chang Chiang

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)


Lattice match is important for epitaxial growth. We show that a competing mechanism, electronic match, can dominate at small film thicknesses for metal-semiconductor systems, where quantum confinement and symmetry requirements may favor a different growth pattern. For Pb(111) on Ge(111), an accidental lattice match leads to a √3×√3 configuration involving a 30° in-plane rotation at large film thicknesses, but it gives way to an incommensurate (1×1) configuration at small film thickness. The transformation follows an approximately inverse-film-thickness dependence with superimposed bilayer oscillations.

Original languageEnglish
Article number066802
JournalPhysical review letters
Issue number6
Publication statusPublished - 2011 Aug 2

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)


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