Abstract
Lattice match is important for epitaxial growth. We show that a competing mechanism, electronic match, can dominate at small film thicknesses for metal-semiconductor systems, where quantum confinement and symmetry requirements may favor a different growth pattern. For Pb(111) on Ge(111), an accidental lattice match leads to a √3×√3 configuration involving a 30° in-plane rotation at large film thicknesses, but it gives way to an incommensurate (1×1) configuration at small film thickness. The transformation follows an approximately inverse-film-thickness dependence with superimposed bilayer oscillations.
Original language | English |
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Article number | 066802 |
Journal | Physical review letters |
Volume | 107 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2011 Aug 2 |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy