Electroosmotic flow control in microfluidic chips using a self-assembled monolayer as the insulator of a flow field-effect transistor

Li Chia Chen; Ching Chou Wu; Ren Guei Wu; Hsien Chang Chang

doi:10.1021/la302186d

Electroosmotic flow control in microfluidic chips using a self-assembled monolayer as the insulator of a flow field-effect transistor

Li Chia Chen, Ching Chou Wu, Ren Guei Wu, Hsien Chang Chang

Department of Biomedical Engineering

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

A novel concept for electroosmotic flow (EOF) control in a microfluidic chip is presented by using a self-assembled monolayer as the insulator of a flow field-effect transistor. Bidirectional EOF control with mobility values of 3.4 ±10^-4 and -3.1 ±10^-4 cm²/V s can be attained, corresponding to the applied gate voltage at -*0.8 and 0.8 V, respectively, without the addition of buffer additives. A relatively high control factor (approximately 400 ± 10^-6 cm²/V ² s) can be obtained. The method presented in this study offers a simple strategy to control the EOF.

Original language	English
Pages (from-to)	11281-11285
Number of pages	5
Journal	Langmuir
Volume	28
Issue number	31
DOIs	https://doi.org/10.1021/la302186d
Publication status	Published - 2012 Aug 7

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Surfaces and Interfaces
Spectroscopy
Electrochemistry

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10.1021/la302186d

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abstract = "A novel concept for electroosmotic flow (EOF) control in a microfluidic chip is presented by using a self-assembled monolayer as the insulator of a flow field-effect transistor. Bidirectional EOF control with mobility values of 3.4 ±10-4 and -3.1 ±10-4 cm2/V s can be attained, corresponding to the applied gate voltage at -*0.8 and 0.8 V, respectively, without the addition of buffer additives. A relatively high control factor (approximately 400 ± 10-6 cm2/V 2 s) can be obtained. The method presented in this study offers a simple strategy to control the EOF.",

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AU - Chang, Hsien Chang

PY - 2012/8/7

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AB - A novel concept for electroosmotic flow (EOF) control in a microfluidic chip is presented by using a self-assembled monolayer as the insulator of a flow field-effect transistor. Bidirectional EOF control with mobility values of 3.4 ±10-4 and -3.1 ±10-4 cm2/V s can be attained, corresponding to the applied gate voltage at -*0.8 and 0.8 V, respectively, without the addition of buffer additives. A relatively high control factor (approximately 400 ± 10-6 cm2/V 2 s) can be obtained. The method presented in this study offers a simple strategy to control the EOF.

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Electroosmotic flow control in microfluidic chips using a self-assembled monolayer as the insulator of a flow field-effect transistor

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