Electrostatic discharge performance of GaN-based light emitting diodes with naturally textured p-GaN layers grown on vicinal sapphires

Yi Jung Liu; Tsung Yuan Tsai; Chih Hung Yen; Li Yang Chen; Tsung Han Tsai; Chien Chang Huang; Tai You Chen; Chi Shiang Hsu; Wen Chau Liu

doi:10.1149/1.3486448

Electrostatic discharge performance of GaN-based light emitting diodes with naturally textured p-GaN layers grown on vicinal sapphires

Yi Jung Liu, Tsung Yuan Tsai, Chih Hung Yen, Li Yang Chen, Tsung Han Tsai, Chien Chang Huang, Tai You Chen, Chi Shiang Hsu, Wen Chau Liu

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

Abstract

The electrostatic discharge (ESD) characteristics of GaN-based light emitting diodes (LEDs) with textured p-GaN layers grown on c-axis vicinal sapphire substrates are studied and demonstrated. Based on the machine model, the device grown on a 0.35° tilt sapphire shows the highest ESD tolerance, whereas the one grown on a 0.2° tilt sapphire exhibits the poorest tolerance. This phenomenon is primarily influenced by the presence of maximum capacitance (C_m) values induced by a parasitic capacitance effect at the p-GaN/indium tin oxide interface rather than the difference in dislocation densities between LEDs.

Original language	English
Pages (from-to)	H406-H408
Journal	Electrochemical and Solid-State Letters
Volume	13
Issue number	12
DOIs	https://doi.org/10.1149/1.3486448
Publication status	Published - 2010

All Science Journal Classification (ASJC) codes

General Chemical Engineering
General Materials Science
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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title = "Electrostatic discharge performance of GaN-based light emitting diodes with naturally textured p-GaN layers grown on vicinal sapphires",

abstract = "The electrostatic discharge (ESD) characteristics of GaN-based light emitting diodes (LEDs) with textured p-GaN layers grown on c-axis vicinal sapphire substrates are studied and demonstrated. Based on the machine model, the device grown on a 0.35° tilt sapphire shows the highest ESD tolerance, whereas the one grown on a 0.2° tilt sapphire exhibits the poorest tolerance. This phenomenon is primarily influenced by the presence of maximum capacitance (Cm) values induced by a parasitic capacitance effect at the p-GaN/indium tin oxide interface rather than the difference in dislocation densities between LEDs.",

author = "Liu, {Yi Jung} and Tsai, {Tsung Yuan} and Yen, {Chih Hung} and Chen, {Li Yang} and Tsai, {Tsung Han} and Huang, {Chien Chang} and Chen, {Tai You} and Hsu, {Chi Shiang} and Liu, {Wen Chau}",

year = "2010",

doi = "10.1149/1.3486448",

language = "English",

volume = "13",

pages = "H406--H408",

journal = "Electrochemical and Solid-State Letters",

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TY - JOUR

T1 - Electrostatic discharge performance of GaN-based light emitting diodes with naturally textured p-GaN layers grown on vicinal sapphires

AU - Liu, Yi Jung

AU - Tsai, Tsung Yuan

AU - Yen, Chih Hung

AU - Chen, Li Yang

AU - Tsai, Tsung Han

AU - Huang, Chien Chang

AU - Chen, Tai You

AU - Hsu, Chi Shiang

AU - Liu, Wen Chau

PY - 2010

Y1 - 2010

N2 - The electrostatic discharge (ESD) characteristics of GaN-based light emitting diodes (LEDs) with textured p-GaN layers grown on c-axis vicinal sapphire substrates are studied and demonstrated. Based on the machine model, the device grown on a 0.35° tilt sapphire shows the highest ESD tolerance, whereas the one grown on a 0.2° tilt sapphire exhibits the poorest tolerance. This phenomenon is primarily influenced by the presence of maximum capacitance (Cm) values induced by a parasitic capacitance effect at the p-GaN/indium tin oxide interface rather than the difference in dislocation densities between LEDs.

AB - The electrostatic discharge (ESD) characteristics of GaN-based light emitting diodes (LEDs) with textured p-GaN layers grown on c-axis vicinal sapphire substrates are studied and demonstrated. Based on the machine model, the device grown on a 0.35° tilt sapphire shows the highest ESD tolerance, whereas the one grown on a 0.2° tilt sapphire exhibits the poorest tolerance. This phenomenon is primarily influenced by the presence of maximum capacitance (Cm) values induced by a parasitic capacitance effect at the p-GaN/indium tin oxide interface rather than the difference in dislocation densities between LEDs.

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DO - 10.1149/1.3486448

M3 - Article

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SN - 1099-0062

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JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 12

ER -

Electrostatic discharge performance of GaN-based light emitting diodes with naturally textured p-GaN layers grown on vicinal sapphires

Abstract

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