Electrostatic discharge performance of GaN-based light emitting diodes with naturally textured p-GaN layers grown on vicinal sapphires

Yi Jung Liu, Tsung Yuan Tsai, Chih Hung Yen, Li Yang Chen, Tsung Han Tsai, Chien Chang Huang, Tai You Chen, Chi Shiang Hsu, Wen Chau Liu

Research output: Contribution to journalArticlepeer-review

Abstract

The electrostatic discharge (ESD) characteristics of GaN-based light emitting diodes (LEDs) with textured p-GaN layers grown on c-axis vicinal sapphire substrates are studied and demonstrated. Based on the machine model, the device grown on a 0.35° tilt sapphire shows the highest ESD tolerance, whereas the one grown on a 0.2° tilt sapphire exhibits the poorest tolerance. This phenomenon is primarily influenced by the presence of maximum capacitance (Cm) values induced by a parasitic capacitance effect at the p-GaN/indium tin oxide interface rather than the difference in dislocation densities between LEDs.

Original languageEnglish
Pages (from-to)H406-H408
JournalElectrochemical and Solid-State Letters
Volume13
Issue number12
DOIs
Publication statusPublished - 2010 Oct 29

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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