TY - JOUR
T1 - Electrostatic superlattices on scaled graphene lattices
AU - Chen, Szu Chao
AU - Kraft, Rainer
AU - Danneau, Romain
AU - Richter, Klaus
AU - Liu, Ming Hao
N1 - Funding Information:
The authors thank R. Huber and J. Eroms for valuable and stimulating discussions, R. Rückner for technical support on using the Athene Cluster of Rechenzentrum of Universität Regensburg, where most of the computations were performed, and J. Bundesmann for building and maintaining the Mordor Cluster of NCKU Physics, where part of the transport simulations were performed. Financial supports from Taiwan Ministry of Science and Technology (107-2112-M-006-004-MY3 and 107-2627-E-006-001) and Ministry of Education (Higher Education Sprout Project), Deutsche For-schungsgemeinschaft (DFG, German Research Foundation)—Project-ID 10314695032— CRC 1277 (Subproject A07) and Project No. Ri681/13-1, and Helmholtz Society (Program STN) are gratefully acknowledged.
Publisher Copyright:
© 2020, The Author(s).
PY - 2020/12/1
Y1 - 2020/12/1
N2 - Electrostatic superlattices have been known to significantly modify the electronic structure of low-dimensional materials. Studies of graphene superlattices were triggered by the discovery of moiré patterns in van der Waals stacks of graphene and hexagonal boron nitride (hBN) layers a few years ago. Very recently, gate-controllable superlattices using spatially modulated gate oxides have been achieved, allowing for Dirac band structure engineering of graphene. Despite these rapid experimental progresses, technical advances in quantum transport simulations for large-scale graphene superlattices have been relatively limited. Here, we show that transport experiments for both graphene/hBN moiré superlattices and gate-controllable superlattices can be well reproduced by transport simulations based on a scalable tight-binding model. Our finding paves the way to tuning-parameter-free quantum transport simulations for graphene superlattices, providing reliable guides for understanding and predicting novel electric properties of complex graphene superlattice devices.
AB - Electrostatic superlattices have been known to significantly modify the electronic structure of low-dimensional materials. Studies of graphene superlattices were triggered by the discovery of moiré patterns in van der Waals stacks of graphene and hexagonal boron nitride (hBN) layers a few years ago. Very recently, gate-controllable superlattices using spatially modulated gate oxides have been achieved, allowing for Dirac band structure engineering of graphene. Despite these rapid experimental progresses, technical advances in quantum transport simulations for large-scale graphene superlattices have been relatively limited. Here, we show that transport experiments for both graphene/hBN moiré superlattices and gate-controllable superlattices can be well reproduced by transport simulations based on a scalable tight-binding model. Our finding paves the way to tuning-parameter-free quantum transport simulations for graphene superlattices, providing reliable guides for understanding and predicting novel electric properties of complex graphene superlattice devices.
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U2 - 10.1038/s42005-020-0335-1
DO - 10.1038/s42005-020-0335-1
M3 - Article
AN - SCOPUS:85083985851
VL - 3
JO - Communications Physics
JF - Communications Physics
SN - 2399-3650
IS - 1
M1 - 71
ER -