Eletrical and mechanical properies of nitrogen and fluorine incorporated organosilicate glass prepared by plasma enhanced chemical vapor deposition

Shiu Ko JangJian, Chuan Pu Liu, Weng Sing Hwang, Sheng Wen Chen, Kuo Hsiu Wei, Ying Lang Wang

Research output: Contribution to conferencePaper

Abstract

The composite organosilicate glass (OSG, SiOC:H) incorporated with nitrogen and fluorine (N-F:OSG) and OSG thin films were deposited on p-type (100) silicon substrates at various temperatures (300°C-400°C) by plasma enhanced chemical vapor deposition method using nitrogen trifluoride (NF3) with trimethelysilane (TMS) and oxygen as precursors. The nitrogen and fluorine content in the composite films were adjusted by varying NF3/TMS gas flow ratio (R) from 0.5 to 1. The film characteristics were investigated by examining the bonding configuration, index of refraction, surface composition, hardness, leakage current density and breakdown field strength. The absorbance spectrum of Fourier transform infrared spectroscopy shows that Si bonding in the form of Si-O, Si-C, Si-N, and Si-F are the major bonding in the N-F:OSG composite films. Meanwhile, the refractive index of the N-F:OSG films increases slightly with increasing deposition temperature. The permittivity of the N-F:OSG is slightly lower than that of the OSG film. The N-F:OSG films with higher R ratios also exhibit higher mechanical hardness and higher dielectric breakdown voltage and superior to those of the OSG films.

Original languageEnglish
Pages188-194
Number of pages7
Publication statusPublished - 2003 Jan 1
EventCopper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium - Orlando, FL, United States
Duration: 2003 Oct 122003 Oct 17

Other

OtherCopper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium
CountryUnited States
CityOrlando, FL
Period03-10-1203-10-17

Fingerprint

Fluorine
Plasma enhanced chemical vapor deposition
Nitrogen
Glass
Composite films
Electric breakdown
Hardness
Silicon
Refraction
Surface structure
Leakage currents
Fourier transform infrared spectroscopy
Flow of gases
Refractive index
Permittivity
Current density
Oxygen
Thin films
Temperature
Composite materials

All Science Journal Classification (ASJC) codes

  • Electrochemistry

Cite this

JangJian, S. K., Liu, C. P., Hwang, W. S., Chen, S. W., Wei, K. H., & Wang, Y. L. (2003). Eletrical and mechanical properies of nitrogen and fluorine incorporated organosilicate glass prepared by plasma enhanced chemical vapor deposition. 188-194. Paper presented at Copper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium, Orlando, FL, United States.
JangJian, Shiu Ko ; Liu, Chuan Pu ; Hwang, Weng Sing ; Chen, Sheng Wen ; Wei, Kuo Hsiu ; Wang, Ying Lang. / Eletrical and mechanical properies of nitrogen and fluorine incorporated organosilicate glass prepared by plasma enhanced chemical vapor deposition. Paper presented at Copper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium, Orlando, FL, United States.7 p.
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abstract = "The composite organosilicate glass (OSG, SiOC:H) incorporated with nitrogen and fluorine (N-F:OSG) and OSG thin films were deposited on p-type (100) silicon substrates at various temperatures (300°C-400°C) by plasma enhanced chemical vapor deposition method using nitrogen trifluoride (NF3) with trimethelysilane (TMS) and oxygen as precursors. The nitrogen and fluorine content in the composite films were adjusted by varying NF3/TMS gas flow ratio (R) from 0.5 to 1. The film characteristics were investigated by examining the bonding configuration, index of refraction, surface composition, hardness, leakage current density and breakdown field strength. The absorbance spectrum of Fourier transform infrared spectroscopy shows that Si bonding in the form of Si-O, Si-C, Si-N, and Si-F are the major bonding in the N-F:OSG composite films. Meanwhile, the refractive index of the N-F:OSG films increases slightly with increasing deposition temperature. The permittivity of the N-F:OSG is slightly lower than that of the OSG film. The N-F:OSG films with higher R ratios also exhibit higher mechanical hardness and higher dielectric breakdown voltage and superior to those of the OSG films.",
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JangJian, SK, Liu, CP, Hwang, WS, Chen, SW, Wei, KH & Wang, YL 2003, 'Eletrical and mechanical properies of nitrogen and fluorine incorporated organosilicate glass prepared by plasma enhanced chemical vapor deposition', Paper presented at Copper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium, Orlando, FL, United States, 03-10-12 - 03-10-17 pp. 188-194.

Eletrical and mechanical properies of nitrogen and fluorine incorporated organosilicate glass prepared by plasma enhanced chemical vapor deposition. / JangJian, Shiu Ko; Liu, Chuan Pu; Hwang, Weng Sing; Chen, Sheng Wen; Wei, Kuo Hsiu; Wang, Ying Lang.

2003. 188-194 Paper presented at Copper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium, Orlando, FL, United States.

Research output: Contribution to conferencePaper

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T1 - Eletrical and mechanical properies of nitrogen and fluorine incorporated organosilicate glass prepared by plasma enhanced chemical vapor deposition

AU - JangJian, Shiu Ko

AU - Liu, Chuan Pu

AU - Hwang, Weng Sing

AU - Chen, Sheng Wen

AU - Wei, Kuo Hsiu

AU - Wang, Ying Lang

PY - 2003/1/1

Y1 - 2003/1/1

N2 - The composite organosilicate glass (OSG, SiOC:H) incorporated with nitrogen and fluorine (N-F:OSG) and OSG thin films were deposited on p-type (100) silicon substrates at various temperatures (300°C-400°C) by plasma enhanced chemical vapor deposition method using nitrogen trifluoride (NF3) with trimethelysilane (TMS) and oxygen as precursors. The nitrogen and fluorine content in the composite films were adjusted by varying NF3/TMS gas flow ratio (R) from 0.5 to 1. The film characteristics were investigated by examining the bonding configuration, index of refraction, surface composition, hardness, leakage current density and breakdown field strength. The absorbance spectrum of Fourier transform infrared spectroscopy shows that Si bonding in the form of Si-O, Si-C, Si-N, and Si-F are the major bonding in the N-F:OSG composite films. Meanwhile, the refractive index of the N-F:OSG films increases slightly with increasing deposition temperature. The permittivity of the N-F:OSG is slightly lower than that of the OSG film. The N-F:OSG films with higher R ratios also exhibit higher mechanical hardness and higher dielectric breakdown voltage and superior to those of the OSG films.

AB - The composite organosilicate glass (OSG, SiOC:H) incorporated with nitrogen and fluorine (N-F:OSG) and OSG thin films were deposited on p-type (100) silicon substrates at various temperatures (300°C-400°C) by plasma enhanced chemical vapor deposition method using nitrogen trifluoride (NF3) with trimethelysilane (TMS) and oxygen as precursors. The nitrogen and fluorine content in the composite films were adjusted by varying NF3/TMS gas flow ratio (R) from 0.5 to 1. The film characteristics were investigated by examining the bonding configuration, index of refraction, surface composition, hardness, leakage current density and breakdown field strength. The absorbance spectrum of Fourier transform infrared spectroscopy shows that Si bonding in the form of Si-O, Si-C, Si-N, and Si-F are the major bonding in the N-F:OSG composite films. Meanwhile, the refractive index of the N-F:OSG films increases slightly with increasing deposition temperature. The permittivity of the N-F:OSG is slightly lower than that of the OSG film. The N-F:OSG films with higher R ratios also exhibit higher mechanical hardness and higher dielectric breakdown voltage and superior to those of the OSG films.

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JangJian SK, Liu CP, Hwang WS, Chen SW, Wei KH, Wang YL. Eletrical and mechanical properies of nitrogen and fluorine incorporated organosilicate glass prepared by plasma enhanced chemical vapor deposition. 2003. Paper presented at Copper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium, Orlando, FL, United States.