Embedded-Ge source and drain in InGaAs/GaAs dual channel MESFET

Shang Chao Hung, Qiuping Luan, Hau Yu Lin, Shuguang Li, Shoou Jinn Chang

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

We report the first demonstration of n-type III-V metal-semiconductor field-effect transistors (nMESFETs) with IV group material hetero-junction source and drain (S/D) technology. A selective epitaxial growth of germanium (Ge) in the recessed gallium arsenide (GaAs) S/D regions is successfully developed using ultra-high vacuum chemical vapor deposition (UHVCVD) system. The dual channel structure includes an additional 10-nm higher mobility n-In 0.2Ga0.8As layer on n-GaAs channel and is introduced to further improve the device performance. The n-MESFET, combining embedded-Ge S/D with In0.2Ga0.8As/GaAs channel, exhibits good transfer properties with a drain current on/off ratio of approximately 103. Due to the small barrier height of Ti/In0.2Ga0.8As Schottky contact, a lattice-matched wide bandgap In0.49Ga 0.51P dielectric layer is also integrated into the device architecture to build a higher electron Schottky barrier height (SBH) for gate leakage current reduction. The Ti/In0.49Ga0.51P/n-In 0.2Ga0.8As Schottky diode shows a comparable leakage level to Ti/n-GaAs with 2 × 10-2 A/cm2 at a gate voltage of -2.0 V.

Original languageEnglish
Pages (from-to)1577-1580
Number of pages4
JournalCurrent Applied Physics
Volume13
Issue number8
DOIs
Publication statusPublished - 2013

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • General Physics and Astronomy

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