Abstract
This chapter addresses emerging resistive nonvolatile memory (NVM) circuit design techniques and implementations for energy-efficient systems. First we introduce emerging memory technologies, including resistive RAM (ReRAM), phase change memory (PCM), and spin-torque transfer magnetic RAM (STT-MRAM). Next, we examine circuit design challenges for read and write operations, and review some of the advanced circuit techniques. Lastly, we discuss the implementation for energy-efficient systems with nonvolatile logic and nonvolatile SRAM using emerging resistive NVM.
| Original language | English |
|---|---|
| Title of host publication | Beyond-CMOS Technologies for Next Generation Computer Design |
| Publisher | Springer International Publishing |
| Pages | 85-132 |
| Number of pages | 48 |
| ISBN (Electronic) | 9783319903859 |
| ISBN (Print) | 9783319903842 |
| DOIs | |
| Publication status | Published - 2018 Jan 1 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
All Science Journal Classification (ASJC) codes
- General Engineering
- General Computer Science
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