Emitter edge-thinning effect on ingaas/inp double-heterostructure-emitter bipolar transistor

Yu Huei Wu, Jan Shing Su, Wei Chou Hsu, Wei Lin, Wen Chau Liu, Ming Jer Kao, Rong Tay Hsu

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


An emitter edge-thinning design is used for a lattice-matched InGaAs/lnP double-heterostructure-emitter bipolar transistor (DHEBT) grown by low-pressure metalorganic chemical vapor deposition (MOCVD). Using the emitter edge-thinning technique, the surface recombination current is reduced and the current gain is improved. This structure reveals a typical current gain as high as 120 at a collector current density of 241 A/cm2, along with an offset voltage as low as 45 mV. Furthermore, the problem of surface recombination current is also discussed in terms of the emitter size effect on current gain. The Gummel plots are shown to explain the influence of the emitter edge-thinning process on the base current ideality factor.

Original languageEnglish
Pages (from-to)5908-5911
Number of pages4
JournalJapanese journal of applied physics
Issue number11R
Publication statusPublished - 1995 Nov

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


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