TY - JOUR
T1 - Emitter edge-thinning effect on ingaas/inp double-heterostructure-emitter bipolar transistor
AU - Wu, Yu Huei
AU - Su, Jan Shing
AU - Hsu, Wei Chou
AU - Lin, Wei
AU - Liu, Wen Chau
AU - Kao, Ming Jer
AU - Hsu, Rong Tay
PY - 1995/11
Y1 - 1995/11
N2 - An emitter edge-thinning design is used for a lattice-matched InGaAs/lnP double-heterostructure-emitter bipolar transistor (DHEBT) grown by low-pressure metalorganic chemical vapor deposition (MOCVD). Using the emitter edge-thinning technique, the surface recombination current is reduced and the current gain is improved. This structure reveals a typical current gain as high as 120 at a collector current density of 241 A/cm2, along with an offset voltage as low as 45 mV. Furthermore, the problem of surface recombination current is also discussed in terms of the emitter size effect on current gain. The Gummel plots are shown to explain the influence of the emitter edge-thinning process on the base current ideality factor.
AB - An emitter edge-thinning design is used for a lattice-matched InGaAs/lnP double-heterostructure-emitter bipolar transistor (DHEBT) grown by low-pressure metalorganic chemical vapor deposition (MOCVD). Using the emitter edge-thinning technique, the surface recombination current is reduced and the current gain is improved. This structure reveals a typical current gain as high as 120 at a collector current density of 241 A/cm2, along with an offset voltage as low as 45 mV. Furthermore, the problem of surface recombination current is also discussed in terms of the emitter size effect on current gain. The Gummel plots are shown to explain the influence of the emitter edge-thinning process on the base current ideality factor.
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U2 - 10.1143/JJAP.34.5908
DO - 10.1143/JJAP.34.5908
M3 - Article
AN - SCOPUS:0029410332
SN - 0021-4922
VL - 34
SP - 5908
EP - 5911
JO - Japanese journal of applied physics
JF - Japanese journal of applied physics
IS - 11R
ER -