Energy band structure tailoring of InGaAsP/InGaAs quantum well prepared by organometallic vapor phase epitaxy and measured by photoluminescence

Wei Lin, Hung Pin Shiao, Chwan Yang Chang, Tian Tsorng Shi, Ching Ting Lee, Yuan Kuang Tu

Research output: Contribution to conferencePaperpeer-review

Abstract

We report the theoretical and experimental results of the InxGa1-xASyP1-y/InzGa1-zAs quantum wells (QW). Wafers prepared by low-pressure organometallic vapor ph ase epitaxy (OMVPE) were studied. The band offset ratios at the heterointerface and material's energy bandgap are determined from the model-solid theory of Van de Walle, while single partical model is used to solve the Schrodinger equation to predict the corresponding wavelength. For unstrained InxGa1-xASyP1-y/In0.53Ga0.47As quantum wells, the conduction band offset of bandgap difference (dEc%) can be formulated as: (dEc%)unstrained = 42.6% - (25.4y)%; on the other hand, for strained InxGa1-xAsyP1-y/InzGa1-zAs quantum wells, the strain (S) changes the dEc% as: (dEc%)strain=(dEc%)unstrained +1.3·S. Results of our samples, measured by photoluminescence and transmission electron microscopy measurements, demonstrate good agreements in devised unstrained QW structure with theoretical calculations.

Original languageEnglish
DOIs
Publication statusPublished - 1994
Event1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan
Duration: 1994 Jul 121994 Jul 15

Conference

Conference1994 International Electron Devices and Materials Symposium, EDMS 1994
Country/TerritoryTaiwan
CityHsinchu
Period94-07-1294-07-15

All Science Journal Classification (ASJC) codes

  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Energy band structure tailoring of InGaAsP/InGaAs quantum well prepared by organometallic vapor phase epitaxy and measured by photoluminescence'. Together they form a unique fingerprint.

Cite this