Abstract
We report the theoretical and experimental results of the InxGa1-xASyP1-y/InzGa1-zAs quantum wells (QW). Wafers prepared by low-pressure organometallic vapor ph ase epitaxy (OMVPE) were studied. The band offset ratios at the heterointerface and material's energy bandgap are determined from the model-solid theory of Van de Walle, while single partical model is used to solve the Schrodinger equation to predict the corresponding wavelength. For unstrained InxGa1-xASyP1-y/In0.53Ga0.47As quantum wells, the conduction band offset of bandgap difference (dEc%) can be formulated as: (dEc%)unstrained = 42.6% - (25.4y)%; on the other hand, for strained InxGa1-xAsyP1-y/InzGa1-zAs quantum wells, the strain (S) changes the dEc% as: (dEc%)strain=(dEc%)unstrained +1.3·S. Results of our samples, measured by photoluminescence and transmission electron microscopy measurements, demonstrate good agreements in devised unstrained QW structure with theoretical calculations.
Original language | English |
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DOIs | |
Publication status | Published - 1994 |
Event | 1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan Duration: 1994 Jul 12 → 1994 Jul 15 |
Conference
Conference | 1994 International Electron Devices and Materials Symposium, EDMS 1994 |
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Country/Territory | Taiwan |
City | Hsinchu |
Period | 94-07-12 → 94-07-15 |
All Science Journal Classification (ASJC) codes
- Industrial and Manufacturing Engineering
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering