Energy band structure tailoring of InGaAsP/InGaAs quantum well prepared by organometallic vapor phase epitaxy and measured by photoluminescence

Wei Lin; Hung Pin Shiao; Chwan Yang Chang; Tian Tsorng Shi; Ching Ting Lee; Yuan Kuang Tu

doi:10.1109/EDMS.1994.771210

Energy band structure tailoring of InGaAsP/InGaAs quantum well prepared by organometallic vapor phase epitaxy and measured by photoluminescence

Wei Lin
, Hung Pin Shiao
, Chwan Yang Chang
, Tian Tsorng Shi
, Ching Ting Lee
, Yuan Kuang Tu

Department of Photonics

Research output: Contribution to conference › Paper › peer-review

Abstract

We report the theoretical and experimental results of the In_xGa_1-xAS_yP_1-y/In_zGa_1-zAs quantum wells (QW). Wafers prepared by low-pressure organometallic vapor ph ase epitaxy (OMVPE) were studied. The band offset ratios at the heterointerface and material's energy bandgap are determined from the model-solid theory of Van de Walle, while single partical model is used to solve the Schrodinger equation to predict the corresponding wavelength. For unstrained In_xGa_1-xAS_yP_1-y/In_0.53Ga_0.47As quantum wells, the conduction band offset of bandgap difference (dEc%) can be formulated as: (dEc%)_unstrained = 42.6% - (25.4y)%; on the other hand, for strained In_xGa_1-xAs_yP_1-y/In_zGa_1-zAs quantum wells, the strain (S) changes the dEc% as: (dEc%)_strain=(dEc%)_unstrained +1.3·S. Results of our samples, measured by photoluminescence and transmission electron microscopy measurements, demonstrate good agreements in devised unstrained QW structure with theoretical calculations.

Original language	English
DOIs	https://doi.org/10.1109/EDMS.1994.771210
Publication status	Published - 1994
Event	1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan Duration: 1994 Jul 12 → 1994 Jul 15

Conference

Conference	1994 International Electron Devices and Materials Symposium, EDMS 1994
Country/Territory	Taiwan
City	Hsinchu
Period	94-07-12 → 94-07-15

All Science Journal Classification (ASJC) codes

Industrial and Manufacturing Engineering
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/EDMS.1994.771210

Cite this

Lin, W., Shiao, H. P., Chang, C. Y., Shi, T. T., Lee, C. T., & Tu, Y. K. (1994). Energy band structure tailoring of InGaAsP/InGaAs quantum well prepared by organometallic vapor phase epitaxy and measured by photoluminescence. Paper presented at 1994 International Electron Devices and Materials Symposium, EDMS 1994, Hsinchu, Taiwan. https://doi.org/10.1109/EDMS.1994.771210

@conference{cf4710f648514ae89b5380f9ed455784,

title = "Energy band structure tailoring of InGaAsP/InGaAs quantum well prepared by organometallic vapor phase epitaxy and measured by photoluminescence",

abstract = "We report the theoretical and experimental results of the InxGa1-xASyP1-y/InzGa1-zAs quantum wells (QW). Wafers prepared by low-pressure organometallic vapor ph ase epitaxy (OMVPE) were studied. The band offset ratios at the heterointerface and material's energy bandgap are determined from the model-solid theory of Van de Walle, while single partical model is used to solve the Schrodinger equation to predict the corresponding wavelength. For unstrained InxGa1-xASyP1-y/In0.53Ga0.47As quantum wells, the conduction band offset of bandgap difference (dEc\%) can be formulated as: (dEc\%)unstrained = 42.6\% - (25.4y)\%; on the other hand, for strained InxGa1-xAsyP1-y/InzGa1-zAs quantum wells, the strain (S) changes the dEc\% as: (dEc\%)strain=(dEc\%)unstrained +1.3·S. Results of our samples, measured by photoluminescence and transmission electron microscopy measurements, demonstrate good agreements in devised unstrained QW structure with theoretical calculations.",

author = "Wei Lin and Shiao, \{Hung Pin\} and Chang, \{Chwan Yang\} and Shi, \{Tian Tsorng\} and Lee, \{Ching Ting\} and Tu, \{Yuan Kuang\}",

note = "Publisher Copyright: {\textcopyright} 1994 IEEE.; 1994 International Electron Devices and Materials Symposium, EDMS 1994 ; Conference date: 12-07-1994 Through 15-07-1994",

year = "1994",

doi = "10.1109/EDMS.1994.771210",

language = "English",

}

Lin, W, Shiao, HP, Chang, CY, Shi, TT, Lee, CT & Tu, YK 1994, 'Energy band structure tailoring of InGaAsP/InGaAs quantum well prepared by organometallic vapor phase epitaxy and measured by photoluminescence', Paper presented at 1994 International Electron Devices and Materials Symposium, EDMS 1994, Hsinchu, Taiwan, 94-07-12 - 94-07-15. https://doi.org/10.1109/EDMS.1994.771210

Energy band structure tailoring of InGaAsP/InGaAs quantum well prepared by organometallic vapor phase epitaxy and measured by photoluminescence. / Lin, Wei; Shiao, Hung Pin; Chang, Chwan Yang et al.
1994. Paper presented at 1994 International Electron Devices and Materials Symposium, EDMS 1994, Hsinchu, Taiwan.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Energy band structure tailoring of InGaAsP/InGaAs quantum well prepared by organometallic vapor phase epitaxy and measured by photoluminescence

AU - Lin, Wei

AU - Shiao, Hung Pin

AU - Chang, Chwan Yang

AU - Shi, Tian Tsorng

AU - Lee, Ching Ting

AU - Tu, Yuan Kuang

PY - 1994

Y1 - 1994

N2 - We report the theoretical and experimental results of the InxGa1-xASyP1-y/InzGa1-zAs quantum wells (QW). Wafers prepared by low-pressure organometallic vapor ph ase epitaxy (OMVPE) were studied. The band offset ratios at the heterointerface and material's energy bandgap are determined from the model-solid theory of Van de Walle, while single partical model is used to solve the Schrodinger equation to predict the corresponding wavelength. For unstrained InxGa1-xASyP1-y/In0.53Ga0.47As quantum wells, the conduction band offset of bandgap difference (dEc%) can be formulated as: (dEc%)unstrained = 42.6% - (25.4y)%; on the other hand, for strained InxGa1-xAsyP1-y/InzGa1-zAs quantum wells, the strain (S) changes the dEc% as: (dEc%)strain=(dEc%)unstrained +1.3·S. Results of our samples, measured by photoluminescence and transmission electron microscopy measurements, demonstrate good agreements in devised unstrained QW structure with theoretical calculations.

AB - We report the theoretical and experimental results of the InxGa1-xASyP1-y/InzGa1-zAs quantum wells (QW). Wafers prepared by low-pressure organometallic vapor ph ase epitaxy (OMVPE) were studied. The band offset ratios at the heterointerface and material's energy bandgap are determined from the model-solid theory of Van de Walle, while single partical model is used to solve the Schrodinger equation to predict the corresponding wavelength. For unstrained InxGa1-xASyP1-y/In0.53Ga0.47As quantum wells, the conduction band offset of bandgap difference (dEc%) can be formulated as: (dEc%)unstrained = 42.6% - (25.4y)%; on the other hand, for strained InxGa1-xAsyP1-y/InzGa1-zAs quantum wells, the strain (S) changes the dEc% as: (dEc%)strain=(dEc%)unstrained +1.3·S. Results of our samples, measured by photoluminescence and transmission electron microscopy measurements, demonstrate good agreements in devised unstrained QW structure with theoretical calculations.

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DO - 10.1109/EDMS.1994.771210

M3 - Paper

AN - SCOPUS:85063569002

T2 - 1994 International Electron Devices and Materials Symposium, EDMS 1994

Y2 - 12 July 1994 through 15 July 1994

ER -

Energy band structure tailoring of InGaAsP/InGaAs quantum well prepared by organometallic vapor phase epitaxy and measured by photoluminescence

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