Energy-filtered transmission electron microscopy of multilayers in semiconductors

Chuan-Pu Liu, C. B. Boothroyd, C. J. Humphreys

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Quantitative analysis of novel semiconductors with wide or ultrathin multilayers of atomic dimensions is very important in order to control electronic and optical properties, but rather difficult due to the limited resolution in most techniques. In this paper we attempt to assess how effectively the total As dopant concentration in ultrathin As doped layers in InP and the Ti atomic fraction in a Ti(x)Al(1-x)N multilayer can be analysed quantitatively using energy-filtered imaging. These two materials have characteristic edges located at widely different energy losses, with the L edge of As being above 1000eV, while that of Ti is around 450 eV. We have quantified the As concentration using the three-window technique and theoretical cross-sections and we find that the resolution limit is dominated by the signal-to-noise ratio in this delta-doped specimen. However, the accuracy of the Ti atomic fraction in Ti(x)Al(1-x)N can be as good as 10 at% for specimens of uniform thickness made by focused ion beam milling. We will compare our results with measurements of the composition made using Fresnel contrast, high resolution imaging and high angle annular dark field techniques.

Original languageEnglish
Pages (from-to)58-70
Number of pages13
JournalJournal of Microscopy
Volume194
Issue number1
DOIs
Publication statusPublished - 1999 Jan 1

Fingerprint

Energy-Filtering Transmission Electron Microscopy
Psychological Techniques
Semiconductors
Signal-To-Noise Ratio
Ions

All Science Journal Classification (ASJC) codes

  • Pathology and Forensic Medicine
  • Histology

Cite this

Liu, Chuan-Pu ; Boothroyd, C. B. ; Humphreys, C. J. / Energy-filtered transmission electron microscopy of multilayers in semiconductors. In: Journal of Microscopy. 1999 ; Vol. 194, No. 1. pp. 58-70.
@article{b61dea3e576c4b13a900c74c4396b3b4,
title = "Energy-filtered transmission electron microscopy of multilayers in semiconductors",
abstract = "Quantitative analysis of novel semiconductors with wide or ultrathin multilayers of atomic dimensions is very important in order to control electronic and optical properties, but rather difficult due to the limited resolution in most techniques. In this paper we attempt to assess how effectively the total As dopant concentration in ultrathin As doped layers in InP and the Ti atomic fraction in a Ti(x)Al(1-x)N multilayer can be analysed quantitatively using energy-filtered imaging. These two materials have characteristic edges located at widely different energy losses, with the L edge of As being above 1000eV, while that of Ti is around 450 eV. We have quantified the As concentration using the three-window technique and theoretical cross-sections and we find that the resolution limit is dominated by the signal-to-noise ratio in this delta-doped specimen. However, the accuracy of the Ti atomic fraction in Ti(x)Al(1-x)N can be as good as 10 at{\%} for specimens of uniform thickness made by focused ion beam milling. We will compare our results with measurements of the composition made using Fresnel contrast, high resolution imaging and high angle annular dark field techniques.",
author = "Chuan-Pu Liu and Boothroyd, {C. B.} and Humphreys, {C. J.}",
year = "1999",
month = "1",
day = "1",
doi = "10.1046/j.1365-2818.1999.00459.x",
language = "English",
volume = "194",
pages = "58--70",
journal = "Journal of Microscopy",
issn = "0022-2720",
publisher = "Wiley-Blackwell",
number = "1",

}

Energy-filtered transmission electron microscopy of multilayers in semiconductors. / Liu, Chuan-Pu; Boothroyd, C. B.; Humphreys, C. J.

In: Journal of Microscopy, Vol. 194, No. 1, 01.01.1999, p. 58-70.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Energy-filtered transmission electron microscopy of multilayers in semiconductors

AU - Liu, Chuan-Pu

AU - Boothroyd, C. B.

AU - Humphreys, C. J.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - Quantitative analysis of novel semiconductors with wide or ultrathin multilayers of atomic dimensions is very important in order to control electronic and optical properties, but rather difficult due to the limited resolution in most techniques. In this paper we attempt to assess how effectively the total As dopant concentration in ultrathin As doped layers in InP and the Ti atomic fraction in a Ti(x)Al(1-x)N multilayer can be analysed quantitatively using energy-filtered imaging. These two materials have characteristic edges located at widely different energy losses, with the L edge of As being above 1000eV, while that of Ti is around 450 eV. We have quantified the As concentration using the three-window technique and theoretical cross-sections and we find that the resolution limit is dominated by the signal-to-noise ratio in this delta-doped specimen. However, the accuracy of the Ti atomic fraction in Ti(x)Al(1-x)N can be as good as 10 at% for specimens of uniform thickness made by focused ion beam milling. We will compare our results with measurements of the composition made using Fresnel contrast, high resolution imaging and high angle annular dark field techniques.

AB - Quantitative analysis of novel semiconductors with wide or ultrathin multilayers of atomic dimensions is very important in order to control electronic and optical properties, but rather difficult due to the limited resolution in most techniques. In this paper we attempt to assess how effectively the total As dopant concentration in ultrathin As doped layers in InP and the Ti atomic fraction in a Ti(x)Al(1-x)N multilayer can be analysed quantitatively using energy-filtered imaging. These two materials have characteristic edges located at widely different energy losses, with the L edge of As being above 1000eV, while that of Ti is around 450 eV. We have quantified the As concentration using the three-window technique and theoretical cross-sections and we find that the resolution limit is dominated by the signal-to-noise ratio in this delta-doped specimen. However, the accuracy of the Ti atomic fraction in Ti(x)Al(1-x)N can be as good as 10 at% for specimens of uniform thickness made by focused ion beam milling. We will compare our results with measurements of the composition made using Fresnel contrast, high resolution imaging and high angle annular dark field techniques.

UR - http://www.scopus.com/inward/record.url?scp=0033044253&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033044253&partnerID=8YFLogxK

U2 - 10.1046/j.1365-2818.1999.00459.x

DO - 10.1046/j.1365-2818.1999.00459.x

M3 - Article

VL - 194

SP - 58

EP - 70

JO - Journal of Microscopy

JF - Journal of Microscopy

SN - 0022-2720

IS - 1

ER -