Enhanced AlGaN/GaN MOS-HEMT performance by using hydrogen peroxide oxidation technique

Han Yin Liu, Bo Yi Chou, Wei-Chou Hsu, Ching Sung Lee, Jinn-Kong Sheu, Chiu Sheng Ho

Research output: Contribution to journalArticlepeer-review

54 Citations (Scopus)


This paper investigates enhanced device characteristics of AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (HEMT) (MOS-HEMT) fabricated by using hydrogen peroxide (H2O2) oxidation technique which demonstrates the advantages of simplicity and cost effectiveness. A 13-nm-thick Al2O3 oxide was grown upon the surface of AlGaN barrier layer and served as the gate dielectric layer and the surface passivation layer at the same time to effectively decrease gate leakage current and prevent RF current collapse, which are the critical issues of nitride HEMTs. Enhanced device performances of dc, RF, power, and reliability of the present MOS-HEMT are comprehensively investigated as compared with a conventional Schottky-gate HEMT.

Original languageEnglish
Article number6374662
Pages (from-to)213-220
Number of pages8
JournalIEEE Transactions on Electron Devices
Issue number1
Publication statusPublished - 2013

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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