Enhanced AlGaN/GaN MOS-HEMT performance by using hydrogen peroxide oxidation technique

Han Yin Liu; Bo Yi Chou; Wei-Chou Hsu; Ching Sung Lee; Jinn-Kong Sheu; Chiu Sheng Ho

doi:10.1109/TED.2012.2227325

Enhanced AlGaN/GaN MOS-HEMT performance by using hydrogen peroxide oxidation technique

Han Yin Liu, Bo Yi Chou, Wei-Chou Hsu, Ching Sung Lee, Jinn-Kong Sheu, Chiu Sheng Ho

Research output: Contribution to journal › Article › peer-review

54 Citations (Scopus)

Abstract

This paper investigates enhanced device characteristics of AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (HEMT) (MOS-HEMT) fabricated by using hydrogen peroxide (H₂O₂) oxidation technique which demonstrates the advantages of simplicity and cost effectiveness. A 13-nm-thick Al₂O₃ oxide was grown upon the surface of AlGaN barrier layer and served as the gate dielectric layer and the surface passivation layer at the same time to effectively decrease gate leakage current and prevent RF current collapse, which are the critical issues of nitride HEMTs. Enhanced device performances of dc, RF, power, and reliability of the present MOS-HEMT are comprehensively investigated as compared with a conventional Schottky-gate HEMT.

Original language	English
Article number	6374662
Pages (from-to)	213-220
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	60
Issue number	1
DOIs	https://doi.org/10.1109/TED.2012.2227325
Publication status	Published - 2013

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

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title = "Enhanced AlGaN/GaN MOS-HEMT performance by using hydrogen peroxide oxidation technique",

abstract = "This paper investigates enhanced device characteristics of AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (HEMT) (MOS-HEMT) fabricated by using hydrogen peroxide (H2O2) oxidation technique which demonstrates the advantages of simplicity and cost effectiveness. A 13-nm-thick Al2O3 oxide was grown upon the surface of AlGaN barrier layer and served as the gate dielectric layer and the surface passivation layer at the same time to effectively decrease gate leakage current and prevent RF current collapse, which are the critical issues of nitride HEMTs. Enhanced device performances of dc, RF, power, and reliability of the present MOS-HEMT are comprehensively investigated as compared with a conventional Schottky-gate HEMT.",

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AU - Liu, Han Yin

AU - Chou, Bo Yi

AU - Hsu, Wei-Chou

AU - Lee, Ching Sung

AU - Sheu, Jinn-Kong

AU - Ho, Chiu Sheng

PY - 2013

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AB - This paper investigates enhanced device characteristics of AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (HEMT) (MOS-HEMT) fabricated by using hydrogen peroxide (H2O2) oxidation technique which demonstrates the advantages of simplicity and cost effectiveness. A 13-nm-thick Al2O3 oxide was grown upon the surface of AlGaN barrier layer and served as the gate dielectric layer and the surface passivation layer at the same time to effectively decrease gate leakage current and prevent RF current collapse, which are the critical issues of nitride HEMTs. Enhanced device performances of dc, RF, power, and reliability of the present MOS-HEMT are comprehensively investigated as compared with a conventional Schottky-gate HEMT.

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