Enhanced antiferromagnetic saturation in amorphous CoFeB-Ru-CoFeB synthetic antiferromagnets by ion-beam assisted deposition

J. C.A. Huang, C. Y. Hsu, S. F. Chen, C. P. Liu, Y. F. Liao, M. Z. Lin, C. H. Lee

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The interlayer coupling of CoFeB-based synthetic antiferromagnets (SyAFs), modulated by the ion-beam assisted deposition (IBAD) has been systematically investigated under different assisted deposition voltage from 0 to 140 V. We observe that proper IBAD voltage can significantly enhance the antiferromagnetically coupled saturation field from 280 to 1000 Oe and retain the amorphous structure of CoFeB layers. This approach provides a convenient method to enhance the magnetic coupling of SyAFs, which is useful for the magnetic tunnel junctions fabrication and magnetoresistive random access memory development.

Original languageEnglish
Article number123923
JournalJournal of Applied Physics
Volume101
Issue number12
DOIs
Publication statusPublished - 2007 Aug 3

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Enhanced antiferromagnetic saturation in amorphous CoFeB-Ru-CoFeB synthetic antiferromagnets by ion-beam assisted deposition'. Together they form a unique fingerprint.

  • Cite this