Enhanced antiferromagnetic saturation in amorphous CoFeB-Ru-CoFeB synthetic antiferromagnets by ion-beam assisted deposition

J. C.A. Huang; C. Y. Hsu; S. F. Chen; C. P. Liu; Y. F. Liao; M. Z. Lin; C. H. Lee

doi:10.1063/1.2748860

Enhanced antiferromagnetic saturation in amorphous CoFeB-Ru-CoFeB synthetic antiferromagnets by ion-beam assisted deposition

J. C.A. Huang, C. Y. Hsu, S. F. Chen, C. P. Liu, Y. F. Liao, M. Z. Lin, C. H. Lee

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

The interlayer coupling of CoFeB-based synthetic antiferromagnets (SyAFs), modulated by the ion-beam assisted deposition (IBAD) has been systematically investigated under different assisted deposition voltage from 0 to 140 V. We observe that proper IBAD voltage can significantly enhance the antiferromagnetically coupled saturation field from 280 to 1000 Oe and retain the amorphous structure of CoFeB layers. This approach provides a convenient method to enhance the magnetic coupling of SyAFs, which is useful for the magnetic tunnel junctions fabrication and magnetoresistive random access memory development.

Original language	English
Article number	123923
Journal	Journal of Applied Physics
Volume	101
Issue number	12
DOIs	https://doi.org/10.1063/1.2748860
Publication status	Published - 2007

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.2748860

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@article{1d0c0285583844fbb50c6d19441d9fde,

title = "Enhanced antiferromagnetic saturation in amorphous CoFeB-Ru-CoFeB synthetic antiferromagnets by ion-beam assisted deposition",

abstract = "The interlayer coupling of CoFeB-based synthetic antiferromagnets (SyAFs), modulated by the ion-beam assisted deposition (IBAD) has been systematically investigated under different assisted deposition voltage from 0 to 140 V. We observe that proper IBAD voltage can significantly enhance the antiferromagnetically coupled saturation field from 280 to 1000 Oe and retain the amorphous structure of CoFeB layers. This approach provides a convenient method to enhance the magnetic coupling of SyAFs, which is useful for the magnetic tunnel junctions fabrication and magnetoresistive random access memory development.",

author = "Huang, {J. C.A.} and Hsu, {C. Y.} and Chen, {S. F.} and Liu, {C. P.} and Liao, {Y. F.} and Lin, {M. Z.} and Lee, {C. H.}",

note = "Funding Information: This work has been supported by the National Science Council of the ROC under Grant No. NSC95-2120-M-006-004, Taiwan SPIN Research Center under No. 95-EC-17-A-01-S1-026, and Micro-Nano Technology Research Center of National Cheng Kung University. The authors would like to give thanks to Professor W. C. Chang and C. H. Chiu for kind assistance in using the vibrating sample magnetometer.",

year = "2007",

doi = "10.1063/1.2748860",

language = "English",

volume = "101",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "12",

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TY - JOUR

T1 - Enhanced antiferromagnetic saturation in amorphous CoFeB-Ru-CoFeB synthetic antiferromagnets by ion-beam assisted deposition

AU - Huang, J. C.A.

AU - Hsu, C. Y.

AU - Chen, S. F.

AU - Liu, C. P.

AU - Liao, Y. F.

AU - Lin, M. Z.

AU - Lee, C. H.

N1 - Funding Information: This work has been supported by the National Science Council of the ROC under Grant No. NSC95-2120-M-006-004, Taiwan SPIN Research Center under No. 95-EC-17-A-01-S1-026, and Micro-Nano Technology Research Center of National Cheng Kung University. The authors would like to give thanks to Professor W. C. Chang and C. H. Chiu for kind assistance in using the vibrating sample magnetometer.

PY - 2007

Y1 - 2007

N2 - The interlayer coupling of CoFeB-based synthetic antiferromagnets (SyAFs), modulated by the ion-beam assisted deposition (IBAD) has been systematically investigated under different assisted deposition voltage from 0 to 140 V. We observe that proper IBAD voltage can significantly enhance the antiferromagnetically coupled saturation field from 280 to 1000 Oe and retain the amorphous structure of CoFeB layers. This approach provides a convenient method to enhance the magnetic coupling of SyAFs, which is useful for the magnetic tunnel junctions fabrication and magnetoresistive random access memory development.

AB - The interlayer coupling of CoFeB-based synthetic antiferromagnets (SyAFs), modulated by the ion-beam assisted deposition (IBAD) has been systematically investigated under different assisted deposition voltage from 0 to 140 V. We observe that proper IBAD voltage can significantly enhance the antiferromagnetically coupled saturation field from 280 to 1000 Oe and retain the amorphous structure of CoFeB layers. This approach provides a convenient method to enhance the magnetic coupling of SyAFs, which is useful for the magnetic tunnel junctions fabrication and magnetoresistive random access memory development.

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U2 - 10.1063/1.2748860

DO - 10.1063/1.2748860

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JF - Journal of Applied Physics

IS - 12

M1 - 123923

ER -

Enhanced antiferromagnetic saturation in amorphous CoFeB-Ru-CoFeB synthetic antiferromagnets by ion-beam assisted deposition

Abstract

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